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- Conditions sélectionnées:
Découvrez les produits 4,839
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|
|
|
Maxim Integrated |
3,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 1K 1WIRE 6TSOC
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Maxim Integrated |
3,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 1K 1WIRE 6TSOC
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
ROHM Semiconductor |
1,551
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 16M PARALLEL 26TSOP
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 26-TSOP | Surface Mount | 16Mb (4M x 4) | Volatile | DRAM | DRAM | - | 30ns | Parallel | 104ns | ||
|
|
|
ROHM Semiconductor |
2,817
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 16M PARALLEL 26TSOP
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 26-TSOP | Surface Mount | 16Mb (4M x 4) | Volatile | DRAM | DRAM | - | 30ns | Parallel | 110ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
27
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH RAM 128M PARAL 168BGA
|
Tray | - | 1.2V，1.8V | -40°C ~ 85°C (TA) | 168-BGA | Surface Mount | 128Mb Flash，512Mb DRAM | Non-Volatile | FLASH - NOR，DRAM - LPDDR2 | FLASH，RAM | 133MHz | - | Parallel | - | ||
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AKM Semiconductor Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC EEPROM 16K SPI 8SSOP
|
Bulk | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | 8-SSOP | Surface Mount | 16Kb (1K x 16) | Non-Volatile | EEPROM | EEPROM | - | - | SPI | - | ||
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|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC FLASH 1G SPI 133MHZ 8WPDFN
|
Tape & Reel (TR) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 8-WPDFN (6x8) (MLP8) | Surface Mount | 1Gb (128M x 8) | Non-Volatile | FLASH - NOR | Flash | 133MHz | - | SPI | 8ms，2.8ms | ||
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1190 MPQ: 1
|
IC DRAM 576M PARALLEL 1067MHZ
|
- | - | 1.28 V ~ 1.42 V | -40°C ~ 95°C (TC) | - | - | 576Mb (16M x 36) | Volatile | DRAM | DRAM | 1067MHz | 8ns | Parallel | - | ||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1190 MPQ: 1
|
IC DRAM 576M PARALLEL 1067MHZ
|
- | - | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | - | - | 576Mb (32M x 18) | Volatile | DRAM | DRAM | 1067MHz | 8ns | Parallel | - | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1190 MPQ: 1
|
IC DRAM 576M PARALLEL 933MHZ
|
- | - | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | - | - | 576Mb (16M x 36) | Volatile | DRAM | DRAM | 933MHz | 8ns | Parallel | - | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1190 MPQ: 1
|
IC DRAM 576M PARALLEL 933MHZ
|
- | - | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | - | - | 576Mb (32M x 18) | Volatile | DRAM | DRAM | 933MHz | 8ns | Parallel | - | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1920 MPQ: 1
|
IC FLASH 1G SPI 133MHZ 8WPDFN
|
- | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 8-WPDFN (6x8) (MLP8) | Surface Mount | 1Gb (128M x 8) | Non-Volatile | FLASH - NOR | Flash | 133MHz | - | SPI | 8ms，2.8ms | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1020 MPQ: 1
|
IC DRAM 4G PARALLEL 1.33GHZ
|
- | - | 1.14 V ~ 1.26 V | -40°C ~ 105°C (TC) | - | - | 4Gb (256M x 16) | Volatile | SDRAM - DDR4 | DRAM | 1.33GHz | - | Parallel | - | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1020 MPQ: 1
|
IC DRAM 4G PARALLEL 1.33GHZ
|
- | - | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | - | - | 4Gb (256M x 16) | Volatile | SDRAM - DDR4 | DRAM | 1.33GHz | - | Parallel | - | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1782 MPQ: 1
|
IC DRAM 512M PARALLEL 166MHZ
|
- | - | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | - | - | 512Mb (32M x 16) | Volatile | SDRAM - Mobile LPDDR | DRAM | 166MHz | 5.0ns | Parallel | 15ns | ||
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|
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Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 44TSOP II
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 44TSOP II
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 44TSOP II
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 44TSOP II
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
Cypress Semiconductor Corp |
4,760
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 128M SPI 133MHZ
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | - | - |
