Découvrez les produits 78
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Supplier Device Package Memory Size Clock Frequency Memory Interface Write Cycle Time - Word, Page
GD25D05CEIGR
GigaDevice Semiconductor (HK) Limited
3,000
3 jours
-
MOQ: 3000  MPQ: 1
NOR FLASH
Tape & Reel (TR) 2.7 V ~ 3.6 V 8-USON (2x3) 512Kb (64K x 8) 100MHz SPI - Dual I/O 50μs,4ms
GD25D05CEIGR
GigaDevice Semiconductor (HK) Limited
5,980
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
Cut Tape (CT) 2.7 V ~ 3.6 V 8-USON (2x3) 512Kb (64K x 8) 100MHz SPI - Dual I/O 50μs,4ms
GD25D05CEIGR
GigaDevice Semiconductor (HK) Limited
5,980
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
- 2.7 V ~ 3.6 V 8-USON (2x3) 512Kb (64K x 8) 100MHz SPI - Dual I/O 50μs,4ms
GD25D10CEIGR
GigaDevice Semiconductor (HK) Limited
3,000
3 jours
-
MOQ: 3000  MPQ: 1
NOR FLASH
Tape & Reel (TR) 2.7 V ~ 3.6 V 8-USON (2x3) 1Mb (128K x 8) 100MHz SPI - Dual I/O 50μs,4ms
GD25D10CEIGR
GigaDevice Semiconductor (HK) Limited
5,992
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
Cut Tape (CT) 2.7 V ~ 3.6 V 8-USON (2x3) 1Mb (128K x 8) 100MHz SPI - Dual I/O 50μs,4ms
GD25D10CEIGR
GigaDevice Semiconductor (HK) Limited
5,992
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
- 2.7 V ~ 3.6 V 8-USON (2x3) 1Mb (128K x 8) 100MHz SPI - Dual I/O 50μs,4ms
GD25WD05CEIGR
GigaDevice Semiconductor (HK) Limited
Enquête
-
-
MOQ: 3000  MPQ: 1
NOR FLASH
Tape & Reel (TR) 1.65 V ~ 3.6 V 8-USON (2x3) 512Kb (64K x 8) 100MHz SPI - Quad I/O -
GD25WD05CEIGR
GigaDevice Semiconductor (HK) Limited
1,000
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
Cut Tape (CT) 1.65 V ~ 3.6 V 8-USON (2x3) 512Kb (64K x 8) 100MHz SPI - Quad I/O -
GD25WD05CEIGR
GigaDevice Semiconductor (HK) Limited
1,000
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
- 1.65 V ~ 3.6 V 8-USON (2x3) 512Kb (64K x 8) 100MHz SPI - Quad I/O -
GD25WD20CEIGR
GigaDevice Semiconductor (HK) Limited
Enquête
-
-
MOQ: 3000  MPQ: 1
NOR FLASH
Tape & Reel (TR) 1.65 V ~ 3.6 V 8-USON (2x3) 2Mb (256K x 8) - SPI - Quad I/O -
GD25WD20CEIGR
GigaDevice Semiconductor (HK) Limited
998
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
Cut Tape (CT) 1.65 V ~ 3.6 V 8-USON (2x3) 2Mb (256K x 8) - SPI - Quad I/O -
GD25WD20CEIGR
GigaDevice Semiconductor (HK) Limited
998
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
- 1.65 V ~ 3.6 V 8-USON (2x3) 2Mb (256K x 8) - SPI - Quad I/O -
GD25WD10CEIGR
GigaDevice Semiconductor (HK) Limited
Enquête
-
-
MOQ: 3000  MPQ: 1
NOR FLASH
Tape & Reel (TR) 1.65 V ~ 3.6 V 8-USON (2x3) 1Mb (128K x 8) - SPI - Quad I/O -
GD25WD10CEIGR
GigaDevice Semiconductor (HK) Limited
997
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
Cut Tape (CT) 1.65 V ~ 3.6 V 8-USON (2x3) 1Mb (128K x 8) - SPI - Quad I/O -
GD25WD10CEIGR
GigaDevice Semiconductor (HK) Limited
997
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
- 1.65 V ~ 3.6 V 8-USON (2x3) 1Mb (128K x 8) - SPI - Quad I/O -
GD25WD40CEIGR
GigaDevice Semiconductor (HK) Limited
Enquête
-
-
MOQ: 3000  MPQ: 1
NOR FLASH
Tape & Reel (TR) 1.65 V ~ 3.6 V 8-USON (2x3) 4Mb (512K x 8) - SPI - Quad I/O -
GD25WD40CEIGR
GigaDevice Semiconductor (HK) Limited
980
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
Cut Tape (CT) 1.65 V ~ 3.6 V 8-USON (2x3) 4Mb (512K x 8) - SPI - Quad I/O -
GD25WD40CEIGR
GigaDevice Semiconductor (HK) Limited
980
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
- 1.65 V ~ 3.6 V 8-USON (2x3) 4Mb (512K x 8) - SPI - Quad I/O -
GD25WD80CEIGR
GigaDevice Semiconductor (HK) Limited
Enquête
-
-
MOQ: 3000  MPQ: 1
NOR FLASH
Tape & Reel (TR) 1.65 V ~ 3.6 V 8-USON (2x3) 8Mb (1M x 8) - SPI - Quad I/O -
GD25WD80CEIGR
GigaDevice Semiconductor (HK) Limited
640
3 jours
-
MOQ: 1  MPQ: 1
NOR FLASH
Cut Tape (CT) 1.65 V ~ 3.6 V 8-USON (2x3) 8Mb (1M x 8) - SPI - Quad I/O -