Mémoire - Zui Ai Technology（Taiwan）Company.

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		Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Clock Frequency
		Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Clock Frequency
			MT42L128M32D1GU-18 WT:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1000 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tape & Reel (TR)	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	4Gb (128M x 32)	533MHz
			MT42L128M32D1GU-25 WT:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1000 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tape & Reel (TR)	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	4Gb (128M x 32)	400MHz
			MT42L128M32D1GU-18 WT:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1260 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tray	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	4Gb (128M x 32)	533MHz
			MT42L128M32D1GU-25 WT:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1260 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tray	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	4Gb (128M x 32)	400MHz
			EDB4432BBBH-1D-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1680 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tray	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	4Gb (128M x 32)	533MHz
			EDB4416BBBH-1DIT-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 2100 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tray	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	4Gb (256M x 16)	533MHz
			EDB4432BBBJ-1D-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 2100 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tray	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	4Gb (128M x 32)	533MHz
			EDB4432BBBJ-1DAIT-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 2100 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tray	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	4Gb (128M x 32)	533MHz
			EDB4416BBBH-1DIT-F-R TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1000 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tape & Reel (TR)	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	4Gb (256M x 16)	533MHz
			MT42L256M16D1GU-18 WT:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1000 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tape & Reel (TR)	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	4Gb (256M x 16)	533MHz
			EDB4432BBBH-1D-F-R TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1000 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tape & Reel (TR)	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	4Gb (128M x 32)	533MHz
			EDB4432BBBJ-1DAAT-F-R TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1000 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tape & Reel (TR)	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	4Gb (128M x 32)	533MHz
			EDB4432BBBJ-1DAIT-F-R TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1000 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tape & Reel (TR)	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	4Gb (128M x 32)	533MHz
			EDB4432BBBJ-1D-F-R	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 134FBGA MOQ: 1000 MPQ: 1	IC DRAM 4G PARALLEL 134FBGA	Tape & Reel (TR)	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	4Gb (128M x 32)	533MHz

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: No.32 Lane96 South-East St Hsinchu City, 30062 Taiwan

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