- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Technology：
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- Memory Interface：
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- Conditions sélectionnées:
Découvrez les produits 23
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|
Cypress Semiconductor Corp |
2,314
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 1G PARALLEL 67BGA
|
Tray | MS-2 | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-BGA (8x6.5) | 1Gb (128M x 8) | FLASH - NAND | 45ns | Parallel | 45ns | |||
|
|
Toshiba Memory America，Inc. |
338
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 1G PARALLEL 67VFBGA
|
Tray | Benand | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 1Gb (128M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 1G PARALLEL 67VFBGA
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 1Gb (128M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
676
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 2G PARALLEL 67VFBGA
|
Tray | Benand | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 2Gb (256M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
459
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 2G PARALLEL 67VFBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 2Gb (256M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
338
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 2G PARALLEL 67VFBGA
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 2Gb (256M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
285
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 67VFBGA
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 4Gb (512M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
12
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 67VFBGA
|
Tray | Benand | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 4Gb (512M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Enquête
|
- |
-
|
MOQ: 338 MPQ: 1
|
IC FLASH 1G PARALLEL 67VFBGA
|
Tray | Benand | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 1Gb (128M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Enquête
|
- |
-
|
MOQ: 338 MPQ: 1
|
IC FLASH 1G PARALLEL 67VFBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 1Gb (128M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 260 MPQ: 1
|
IC FLASH 2G PARALLEL 67BGA
|
Tray | MS-2 | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-BGA (8x6.5) | 2Gb (256M x 8) | FLASH - NAND | 45ns | Parallel | 45ns | |||
|
|
Toshiba Memory America，Inc. |
Enquête
|
- |
-
|
MOQ: 338 MPQ: 1
|
IC FLASH 2G PARALLEL 67VFBGA
|
Tray | Benand | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 2Gb (256M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC FLASH 1G PARALLEL 67BGA
|
Tape & Reel (TR) | ML-2 | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-BGA (8x6.5) | 1Gb (128M x 8) | FLASH - NAND | - | Parallel | 25ns | |||
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC FLASH 1G PARALLEL 67BGA
|
Tape & Reel (TR) | MS-2 | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-BGA (8x6.5) | 1Gb (128M x 8) | FLASH - NAND | 45ns | Parallel | 45ns | |||
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 260 MPQ: 1
|
IC FLASH 1G PARALLEL 67BGA
|
Tray | ML-2 | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-BGA (8x6.5) | 1Gb (128M x 8) | FLASH - NAND | - | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Enquête
|
- |
-
|
MOQ: 338 MPQ: 1
|
IC FLASH 4G PARALLEL 67VFBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 4Gb (512M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Enquête
|
- |
-
|
MOQ: 338 MPQ: 1
|
IC FLASH 4G PARALLEL 67VFBGA
|
Tray | Benand | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA (6.5x8) | 4Gb (512M x 8) | FLASH - NAND (SLC) | 25ns | Parallel | 25ns | |||
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC FLASH 2G PARALLEL
|
Tape & Reel (TR) | ML-2 | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-BGA (8x6.5) | 2Gb (256M x 8) | FLASH - NAND | - | Parallel | 25ns | |||
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 260 MPQ: 1
|
IC FLASH 2G PARALLEL
|
Tray | ML-2 | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-BGA (8x6.5) | 2Gb (256M x 8) | FLASH - NAND | - | Parallel | 25ns | |||
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC FLASH 2G PARALLEL
|
Tape & Reel (TR) | MS-2 | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | 67-BGA (8x6.5) | 2Gb (256M x 8) | FLASH - NAND | 45ns | Parallel | 45ns |
