Conditions sélectionnées:
Découvrez les produits 35
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Supplier Device Package Memory Size Clock Frequency Access Time
MT49H16M18SJ-25:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 288M PARALLEL 144FBGA
Tape & Reel (TR) 0°C ~ 95°C (TC) 144-FBGA (18.5x11) 288Mb (16M x 18) 400MHz 20ns
MT49H16M18SJ-25:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 288M PARALLEL 144FBGA
Cut Tape (CT) 0°C ~ 95°C (TC) 144-FBGA (18.5x11) 288Mb (16M x 18) 400MHz 20ns
MT49H16M18SJ-25:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 288M PARALLEL 144FBGA
- 0°C ~ 95°C (TC) 144-FBGA (18.5x11) 288Mb (16M x 18) 400MHz 20ns
IS49NLC36800-25WBL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 288M PARALLEL 400MHZ
Tray 0°C ~ 70°C (TA) 144-TWBGA (11x18.5) 288Mb (8M x 36) 400MHz 15ns
MT49H16M18CSJ-25:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 288M PARALLEL 144FBGA
Tape & Reel (TR) 0°C ~ 95°C (TC) 144-FBGA (18.5x11) 288Mb (16M x 18) 400MHz 20ns
MT49H16M18CSJ-25:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 288M PARALLEL 144FBGA
Cut Tape (CT) 0°C ~ 95°C (TC) 144-FBGA (18.5x11) 288Mb (16M x 18) 400MHz 20ns
MT49H16M18CSJ-25:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 288M PARALLEL 144FBGA
- 0°C ~ 95°C (TC) 144-FBGA (18.5x11) 288Mb (16M x 18) 400MHz 20ns
IS49NLC36800-25EWBL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 288M PARALLEL 400MHZ
Tray 0°C ~ 70°C (TA) 144-TWBGA (11x18.5) 288Mb (8M x 36) 400MHz 15ns
IS49NLC18160-33WBLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 288M PARALLEL 300MHZ
Tray -40°C ~ 85°C (TA) 144-TWBGA (11x18.5) 288Mb (16M x 18) 300MHz 20ns
IS49NLC36800-33WBLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 288M PARALLEL 300MHZ
Tray -40°C ~ 85°C (TA) 144-TWBGA (11x18.5) 288Mb (8M x 36) 300MHz 20ns
IS49NLC93200-33WBLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 288M PARALLEL 300MHZ
Tray -40°C ~ 85°C (TA) 144-TWBGA (11x18.5) 288Mb (32M x 9) 300MHz 20ns
IS49NLS93200-33WBLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 288M PARALLEL 300MHZ
Tray -40°C ~ 85°C (TA) 144-TWBGA (11x18.5) 288Mb (32M x 9) 300MHz 20ns
IS49NLC18160-25WBLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 288M PARALLEL 400MHZ
Tray -40°C ~ 85°C (TA) 144-TWBGA (11x18.5) 288Mb (16M x 18) 400MHz 20ns
IS49NLC93200-25WBLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 288M PARALLEL 400MHZ
Tray -40°C ~ 85°C (TA) 144-TWBGA (11x18.5) 288Mb (32M x 9) 400MHz 20ns
IS49NLS93200-25WBLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 288M PARALLEL 400MHZ
Tray -40°C ~ 85°C (TA) 144-TWBGA (11x18.5) 288Mb (32M x 9) 400MHz 20ns
IS49NLC36800-25EWBLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 288M PARALLEL 400MHZ
Tray -40°C ~ 85°C (TA) 144-TWBGA (11x18.5) 288Mb (8M x 36) 400MHz 15ns
IS49NLC36160A-25EWBL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 576M PARALLEL 400MHZ
Tray 0°C ~ 95°C (TC) 144-TWBGA (11x18.5) 576Mb (16M x 36) 400MHz 15ns
IS49NLC96400A-33WBL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 576M PARALLEL 300MHZ
Tray 0°C ~ 95°C (TC) 144-TWBGA (11x18.5) 576Mb (64M x 9) 300MHz 20ns
IS49NLS96400A-33WBL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 576M PARALLEL 300MHZ
Tray -40°C ~ 85°C (TA) 144-TWBGA (11x18.5) 576Mb (64M x 9) 300MHz 20ns
IS49NLC18320A-33WBL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 104  MPQ: 1
IC DRAM 576M PARALLEL 300MHZ
Tray 0°C ~ 95°C (TC) 144-TWBGA (11x18.5) 576Mb (32M x 18) 300MHz 20ns