- Operating Temperature:
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- Supplier Device Package:
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- Memory Size:
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- Clock Frequency:
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- Conditions sélectionnées:
Découvrez les produits 35
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Supplier Device Package | Memory Size | Clock Frequency | Access Time | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Supplier Device Package | Memory Size | Clock Frequency | Access Time | ||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 288M PARALLEL 144FBGA
|
Tape & Reel (TR) | 0°C ~ 95°C (TC) | 144-FBGA (18.5x11) | 288Mb (16M x 18) | 400MHz | 20ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 288M PARALLEL 144FBGA
|
Cut Tape (CT) | 0°C ~ 95°C (TC) | 144-FBGA (18.5x11) | 288Mb (16M x 18) | 400MHz | 20ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 288M PARALLEL 144FBGA
|
- | 0°C ~ 95°C (TC) | 144-FBGA (18.5x11) | 288Mb (16M x 18) | 400MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
Tray | 0°C ~ 70°C (TA) | 144-TWBGA (11x18.5) | 288Mb (8M x 36) | 400MHz | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 288M PARALLEL 144FBGA
|
Tape & Reel (TR) | 0°C ~ 95°C (TC) | 144-FBGA (18.5x11) | 288Mb (16M x 18) | 400MHz | 20ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 288M PARALLEL 144FBGA
|
Cut Tape (CT) | 0°C ~ 95°C (TC) | 144-FBGA (18.5x11) | 288Mb (16M x 18) | 400MHz | 20ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 288M PARALLEL 144FBGA
|
- | 0°C ~ 95°C (TC) | 144-FBGA (18.5x11) | 288Mb (16M x 18) | 400MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
Tray | 0°C ~ 70°C (TA) | 144-TWBGA (11x18.5) | 288Mb (8M x 36) | 400MHz | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 300MHZ
|
Tray | -40°C ~ 85°C (TA) | 144-TWBGA (11x18.5) | 288Mb (16M x 18) | 300MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 300MHZ
|
Tray | -40°C ~ 85°C (TA) | 144-TWBGA (11x18.5) | 288Mb (8M x 36) | 300MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 300MHZ
|
Tray | -40°C ~ 85°C (TA) | 144-TWBGA (11x18.5) | 288Mb (32M x 9) | 300MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 300MHZ
|
Tray | -40°C ~ 85°C (TA) | 144-TWBGA (11x18.5) | 288Mb (32M x 9) | 300MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
Tray | -40°C ~ 85°C (TA) | 144-TWBGA (11x18.5) | 288Mb (16M x 18) | 400MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
Tray | -40°C ~ 85°C (TA) | 144-TWBGA (11x18.5) | 288Mb (32M x 9) | 400MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
Tray | -40°C ~ 85°C (TA) | 144-TWBGA (11x18.5) | 288Mb (32M x 9) | 400MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
Tray | -40°C ~ 85°C (TA) | 144-TWBGA (11x18.5) | 288Mb (8M x 36) | 400MHz | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 400MHZ
|
Tray | 0°C ~ 95°C (TC) | 144-TWBGA (11x18.5) | 576Mb (16M x 36) | 400MHz | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 300MHZ
|
Tray | 0°C ~ 95°C (TC) | 144-TWBGA (11x18.5) | 576Mb (64M x 9) | 300MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 300MHZ
|
Tray | -40°C ~ 85°C (TA) | 144-TWBGA (11x18.5) | 576Mb (64M x 9) | 300MHz | 20ns | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 300MHZ
|
Tray | 0°C ~ 95°C (TC) | 144-TWBGA (11x18.5) | 576Mb (32M x 18) | 300MHz | 20ns |