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- Conditions sélectionnées:
Découvrez les produits 80
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRAM 4G PARALLEL 168WFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5.0ns | 15ns | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 2G PARALLEL 168WFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 2Gb (64M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 166MHz | 5.0ns | 15ns | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FLASH RAM 4G PARAL 168WFBGA
|
Bulk | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (256M x 16)(NAND)，2Gb (64M x 32)(LPDRAM) | Non-Volatile | FLASH - NAND，Mobile LPDRAM | FLASH，RAM | 200MHz | - | - | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 2G PARALLEL 168WFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 2Gb (64M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 2G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 2Gb (64M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FLASH RAM 4G PARAL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (512M x 8)(NAND)，2Gb (64M x 32)(LPDRAM) | Non-Volatile | FLASH - NAND，Mobile LPDRAM | FLASH，RAM | 200MHz | - | - | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FLASH RAM 4G PARAL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (256M x 16)(NAND)，2Gb (128M x 16)(LPDRAM) | Non-Volatile | FLASH - NAND，Mobile LPDRAM | FLASH，RAM | 200MHz | - | - | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 4G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 4G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 4G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 4G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 1Gb (32M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 1Gb (32M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 2G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 2Gb (64M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 2G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TA) | 168-WFBGA (12x12) | 2Gb (64M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 2G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 2Gb (64M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 2G PARALLEL 168WFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TA) | 168-WFBGA (12x12) | 2Gb (64M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FLASH RAM 4G PARAL 168WFBGA
|
Bulk | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (512M x 8)(NAND)，2Gb (64M x 32)(LPDRAM) | Non-Volatile | FLASH - NAND，Mobile LPDRAM | FLASH，RAM | 200MHz | - | - | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FLASH RAM 4G PARAL 168WFBGA
|
Bulk | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (256M x 16)(NAND)，2Gb (128M x 16)(LPDRAM) | Non-Volatile | FLASH - NAND，Mobile LPDRAM | FLASH，RAM | 200MHz | - | - | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 4G PARALLEL 168WFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-WFBGA (12x12) | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5.0ns | 15ns |
