Conditions sélectionnées:
Découvrez les produits 36
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Supplier Device Package Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Write Cycle Time - Word, Page
NAND01GW3B2AZA6E
STMicroelectronics
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 1G PARALLEL 63VFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-VFBGA (9x11) 1Gb (128M x 8) Non-Volatile FLASH - NAND Flash - 30ns 30ns
NAND01GR3B2BZA6E
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 1G PARALLEL 63VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA (9x11) 1Gb (128M x 8) Non-Volatile FLASH - NAND Flash - 30ns 30ns
NAND01GW3B2BZA6E
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 1G PARALLEL 63VFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-VFBGA (9x11) 1Gb (128M x 8) Non-Volatile FLASH - NAND Flash - 30ns 30ns
NAND02GR3B2DZA6E
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 2G PARALLEL 63VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA (9.5x12) 2Gb (256M x 8) Non-Volatile FLASH - NAND Flash - 45ns 45ns
NAND512R3A2CZA6E
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 512M PARALLEL 63VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA (9x11) 512Mb (64M x 8) Non-Volatile FLASH - NAND Flash - 50ns 50ns
NAND512W3A2CZA6E
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 512M PARALLEL 63VFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-VFBGA (9x11) 512Mb (64M x 8) Non-Volatile FLASH - NAND Flash - 50ns 50ns
NAND01GR3B2CZA6E
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 1G PARALLEL 63VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA (9.5x12) 1Gb (128M x 8) Non-Volatile FLASH - NAND Flash - 25ns 25ns
M29W320DB70ZA6
Micron Technology Inc.
Enquête
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MOQ: 1020  MPQ: 1
IC FLASH 32M PARALLEL 63TFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-TFBGA (7x11) 32Mb (4M x 8,2M x 16) Non-Volatile FLASH - NOR Flash - 70ns 70ns
NAND02GW3B2DZA6E
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 2G PARALLEL 63VFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-VFBGA (9.5x12) 2Gb (256M x 8) Non-Volatile FLASH - NAND Flash - 25ns 25ns
NAND512R3A2DZA6E
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 512M PARALLEL 63VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA (9x11) 512Mb (64M x 8) Non-Volatile FLASH - NAND Flash - 50ns 50ns
NAND512W3A2DZA6E
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 512M PARALLEL 63VFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-VFBGA (9x11) 512Mb (64M x 8) Non-Volatile FLASH - NAND Flash - 50ns 50ns
MT47H256M8THN-25E:H
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 63FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 63-FBGA (8x10) 2Gb (256M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
MT47H256M8THN-3:H
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 63FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 63-FBGA (8x10) 2Gb (256M x 8) Volatile SDRAM - DDR2 DRAM 333MHz 450ps 15ns
MT47H512M8WTR-25E:C
Micron Technology Inc.
Enquête
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MOQ: 1320  MPQ: 1
IC DRAM 4G PARALLEL 63FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 63-FBGA (9x11.5) 4Gb (512M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
MT47H512M8WTR-3:C
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 4G PARALLEL 63FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 63-FBGA (9x11.5) 4Gb (512M x 8) Volatile SDRAM - DDR2 DRAM 333MHz 450ps 15ns
MT47H256M8THN-25E IT:H
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 63FBGA
Tray 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 63-FBGA (8x10) 2Gb (256M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
MT47H256M8THN-3 IT:H
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 63FBGA
Tray 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 63-FBGA (8x10) 2Gb (256M x 8) Volatile SDRAM - DDR2 DRAM 333MHz 450ps 15ns
MT47H512M4THN-25E:H
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 63FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 63-FBGA (8x10) 2Gb (512M x 4) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
NAND512R3A2SZAXE
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 512M PARALLEL 63VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA (9x11) 512Mb (64M x 8) Non-Volatile FLASH - NAND Flash - 50ns 50ns
NAND512W3A2SZAXE
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 512M PARALLEL 63VFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-VFBGA (9x11) 512Mb (64M x 8) Non-Volatile FLASH - NAND Flash - 50ns 50ns