- Voltage - Supply：
-
- Operating Temperature：
-
- Memory Size：
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- Conditions sélectionnées:
Découvrez les produits 172
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Memory Size | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Memory Size | Access Time | Write Cycle Time - Word, Page | |
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | 15ns | 15ns | |||
|
|
IDT，Integrated Device Technology Inc |
830
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | 15ns | 15ns | |||
|
|
IDT，Integrated Device Technology Inc |
830
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | 15ns | 15ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | 20ns | 20ns | |||
|
|
IDT，Integrated Device Technology Inc |
1,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | 20ns | 20ns | |||
|
|
IDT，Integrated Device Technology Inc |
1,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | 20ns | 20ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 20ns | 20ns | |||
|
|
IDT，Integrated Device Technology Inc |
139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 20ns | 20ns | |||
|
|
IDT，Integrated Device Technology Inc |
139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 20ns | 20ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 15ns | 15ns | |||
|
|
IDT，Integrated Device Technology Inc |
134
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 15ns | 15ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 15ns | 15ns | |||
|
|
IDT，Integrated Device Technology Inc |
559
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Tube | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | 12ns | 12ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Tube | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 15ns | 15ns | |||
|
|
IDT，Integrated Device Technology Inc |
6
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Tube | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 12ns | 12ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Tape & Reel (TR) | 3.15 V ~ 3.6 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | 10ns | 10ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Tape & Reel (TR) | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | 15ns | 15ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Tape & Reel (TR) | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 15ns | 15ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
Cut Tape (CT) | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 15ns | 15ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOJ
|
- | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 15ns | 15ns |
