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- Voltage - Supply:
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- Supplier Device Package:
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- Memory Size:
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- Technology:
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- Conditions sélectionnées:
Découvrez les produits 371
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Clock Frequency | Access Time | Write Cycle Time - Word, Page | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Clock Frequency | Access Time | Write Cycle Time - Word, Page | ||
Micron Technology Inc. |
1,301
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 78FBGA
|
Tray | - | 1.283 V ~ 1.45 V | 0°C ~ 95°C (TC) | 78-FBGA (8x10.5) | 1Gb (128M x 8) | SDRAM - DDR3L | 933MHz | 20ns | - | ||||
Micron Technology Inc. |
268
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78FBGA
|
Tray | - | 1.283 V ~ 1.45 V | 0°C ~ 95°C (TC) | 78-FBGA (8x10.5) | 4Gb (512M x 8) | SDRAM - DDR3L | 933MHz | 20ns | - | ||||
Micron Technology Inc. |
2,156
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 78FBGA
|
Tray | - | 1.283 V ~ 1.45 V | -40°C ~ 105°C (TC) | 78-FBGA (8x10.5) | 2Gb (256M x 8) | SDRAM - DDR3L | 800MHz | 13.75ns | - | ||||
ISSI,Integrated Silicon Solution Inc |
2,402
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78TWBGA
|
Tray | - | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | 78-TWBGA (9x10.5) | 4Gb (512M x 8) | SDRAM - DDR3L | 800MHz | 20ns | 15ns | ||||
Micron Technology Inc. |
2,534
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78FBGA
|
Tray | - | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | 78-FBGA (9x10.5) | 4Gb (512M x 8) | SDRAM - DDR4 | 1.2GHz | - | - | ||||
Micron Technology Inc. |
296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78FBGA
|
Tray | - | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | 78-FBGA (8x10.5) | 4Gb (512M x 8) | SDRAM - DDR3L | 933MHz | 20ns | - | ||||
ISSI,Integrated Silicon Solution Inc |
562
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78TWBGA
|
Tray | - | 1.425 V ~ 1.575 V | 0°C ~ 95°C (TC) | 78-TWBGA (9x10.5) | 4Gb (512M x 8) | SDRAM - DDR3 | 800MHz | 20ns | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
197
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78TWBGA
|
Tray | - | 1.283 V ~ 1.45 V | 0°C ~ 95°C (TC) | 78-TWBGA (9x10.5) | 4Gb (512M x 8) | SDRAM - DDR3L | 800MHz | 20ns | 15ns | ||||
Alliance Memory,Inc. |
143
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 8G PARALLEL 78FBGA
|
Tray | - | 1.283 V ~ 1.45 V | 0°C ~ 95°C (TC) | 78-FBGA (9x13.2) | 8Gb (1G x 8) | SDRAM - DDR3L | 800MHz | 13.75ns | - | ||||
ISSI,Integrated Silicon Solution Inc |
168
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 78TWBGA
|
Tray | - | 1.425 V ~ 1.575 V | 0°C ~ 95°C (TC) | 78-TWBGA (8x10.5) | 1Gb (128M x 8) | SDRAM - DDR3 | 800MHz | 20ns | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 78TWBGA
|
Tray | - | 1.425 V ~ 1.575 V | -40°C ~ 95°C (TC) | 78-TWBGA (8x10.5) | 1Gb (128M x 8) | SDRAM - DDR3 | 800MHz | 20ns | 15ns | ||||
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 1G PARALLEL 78FBGA
|
Tape & Reel (TR) | - | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | 78-FBGA (8x10.5) | 1Gb (128M x 8) | SDRAM - DDR3L | 933MHz | 20ns | - | ||||
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 78FBGA
|
Cut Tape (CT) | - | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | 78-FBGA (8x10.5) | 1Gb (128M x 8) | SDRAM - DDR3L | 933MHz | 20ns | - | ||||
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 78FBGA
|
- | - | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | 78-FBGA (8x10.5) | 1Gb (128M x 8) | SDRAM - DDR3L | 933MHz | 20ns | - | ||||
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 4G PARALLEL 78FBGA
|
Tape & Reel (TR) | - | 1.283 V ~ 1.45 V | -40°C ~ 105°C (TC) | 78-FBGA (8x10.5) | 4Gb (512M x 8) | SDRAM - DDR3L | 933MHz | 20ns | - | ||||
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78FBGA
|
Cut Tape (CT) | - | 1.283 V ~ 1.45 V | -40°C ~ 105°C (TC) | 78-FBGA (8x10.5) | 4Gb (512M x 8) | SDRAM - DDR3L | 933MHz | 20ns | - | ||||
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78FBGA
|
- | - | 1.283 V ~ 1.45 V | -40°C ~ 105°C (TC) | 78-FBGA (8x10.5) | 4Gb (512M x 8) | SDRAM - DDR3L | 933MHz | 20ns | - | ||||
Micron Technology Inc. |
996
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78FBGA
|
Tray | - | 1.283 V ~ 1.45 V | 0°C ~ 95°C (TC) | 78-FBGA (8x10.5) | 4Gb (1G x 4) | SDRAM - DDR3L | 933MHz | 20ns | - | ||||
ISSI,Integrated Silicon Solution Inc |
273
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78TWBGA
|
Tray | - | 1.425 V ~ 1.575 V | -40°C ~ 95°C (TC) | 78-TWBGA (9x10.5) | 4Gb (512M x 8) | SDRAM - DDR3 | 800MHz | 20ns | 15ns | ||||
Micron Technology Inc. |
210
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 4G PARALLEL 78FBGA
|
Tray | - | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | 78-FBGA (9x10.5) | 4Gb (1G x 4) | SDRAM - DDR4 | 1.2GHz | - | - |