Découvrez les produits 88
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Supplier Device Package Memory Size Technology Clock Frequency Write Cycle Time - Word, Page
MT40A256M16GE-083E AUT:B
Micron Technology Inc.
741
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Tray 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz -
MT40A256M16GE-083E AUT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Tape & Reel (TR) 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz -
MT40A256M16GE-083E AUT:B TR
Micron Technology Inc.
1,388
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Cut Tape (CT) 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz -
MT40A256M16GE-083E AUT:B TR
Micron Technology Inc.
1,388
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
- 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz -
MT40A256M16GE-083E AAT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Tape & Reel (TR) 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz -
MT40A256M16GE-083E AAT:B TR
Micron Technology Inc.
1,950
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Cut Tape (CT) 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz -
MT40A256M16GE-083E AAT:B TR
Micron Technology Inc.
1,950
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
- 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz -
MT40A256M16GE-075E AAT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tape & Reel (TR) 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.33GHz -
MT40A256M16GE-075E AAT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Cut Tape (CT) 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.33GHz -
MT40A256M16GE-075E AAT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
- 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.33GHz -
MT40A512M16JY-083E IT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tape & Reel (TR) 1.14 V ~ 1.26 V -40°C ~ 95°C (TC) 96-FBGA (8x14) 8Gb (512M x 16) SDRAM - DDR4 1.2GHz -
MT40A512M16JY-083E IT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Cut Tape (CT) 1.14 V ~ 1.26 V -40°C ~ 95°C (TC) 96-FBGA (8x14) 8Gb (512M x 16) SDRAM - DDR4 1.2GHz -
MT40A512M16JY-083E IT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
- 1.14 V ~ 1.26 V -40°C ~ 95°C (TC) 96-FBGA (8x14) 8Gb (512M x 16) SDRAM - DDR4 1.2GHz -
MT40A256M16GE-075E AUT:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.33GHZ
Tray 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.33GHz -
MT40A256M16GE-083E:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tray 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) 96-FBGA (14x9) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz -
MT41J64M16JT-125:G
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 96FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 96-FBGA (8x14) 1Gb (64M x 16) SDRAM - DDR3 800MHz -
MT41J64M16JT-15E IT:G
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 96FBGA
Tray 1.425 V ~ 1.575 V -40°C ~ 95°C (TC) 96-FBGA (8x14) 1Gb (64M x 16) SDRAM - DDR3 667MHz -
MT41J64M16JT-15E:G
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 96FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 96-FBGA (8x14) 1Gb (64M x 16) SDRAM - DDR3 667MHz -
MT41J64M16JT-187E:G
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 96FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 96-FBGA (8x14) 1Gb (64M x 16) SDRAM - DDR3 533MHz -
MT41J64M16JT-15E IT:G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 1G PARALLEL 96FBGA
Tape & Reel (TR) 1.425 V ~ 1.575 V -40°C ~ 95°C (TC) 96-FBGA (8x14) 1Gb (64M x 16) SDRAM - DDR3 667MHz -