- Voltage - Supply：
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- Operating Temperature：
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- Memory Size：
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- Technology：
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- Conditions sélectionnées:
Découvrez les produits 138
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Memory Size | Technology | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Memory Size | Technology | Access Time | Write Cycle Time - Word, Page | |
|
|
|
ISSI，Integrated Silicon Solution Inc |
650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
Tray | - | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM - Asynchronous | 45ns | 45ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
1,363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
Tray | - | 2.5 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM - Asynchronous | 55ns | 55ns | ||
|
|
|
Alliance Memory，Inc. |
1,428
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
Tray | - | 2.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM - Asynchronous | 55ns | 55ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
1,864
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
Tray | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM - Asynchronous | 25ns | 25ns | ||
|
|
|
Renesas Electronics America |
343
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
Tray | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM | 55ns | 55ns | ||
|
|
|
Renesas Electronics America |
348
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM | 45ns | 45ns | ||
|
|
|
Renesas Electronics America |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
Tape & Reel (TR) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM | 45ns | 45ns | ||
|
|
|
Renesas Electronics America |
950
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
Cut Tape (CT) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM | 45ns | 45ns | ||
|
|
|
Renesas Electronics America |
950
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
- | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM | 45ns | 45ns | ||
|
|
|
Renesas Electronics America |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM | 55ns | 55ns | ||
|
|
|
Renesas Electronics America |
825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM | 55ns | 55ns | ||
|
|
|
Renesas Electronics America |
825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32TSOP II
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | SRAM | 55ns | 55ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
103
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32TSOP II
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | SRAM - Asynchronous | 12ns | 12ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
159
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32TSOP II
|
Tray | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | SRAM - Asynchronous | 10ns | 10ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32TSOP II
|
Tape & Reel (TR) | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | SRAM - Asynchronous | 10ns | 10ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32TSOP II
|
Tape & Reel (TR) | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | SRAM - Asynchronous | 10ns | 10ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 702 MPQ: 1
|
IC SRAM 1M PARALLEL 32TSOP II
|
Tray | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | SRAM - Asynchronous | 10ns | 10ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32TSOP II
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | SRAM - Asynchronous | 10ns | 10ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 585 MPQ: 1
|
IC SRAM 1M PARALLEL 32TSOP II
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 1Mb (128K x 8) | SRAM - Asynchronous | 10ns | 10ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32TSOP II
|
Tape & Reel (TR) | - | 3.15 V ~ 3.45 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | SRAM - Asynchronous | 10ns | 10ns |
