Découvrez les produits 140
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Memory Size Clock Frequency Access Time Write Cycle Time - Word, Page
MT48LC4M32B2P-6A:L TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 2000  MPQ: 1
IC DRAM 128M PARALLEL 86TSOP II
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 128Mb (4M x 32) 167MHz 5.4ns 12ns
MT48LC2M32B2P-6A AIT:J TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
Automotive,AEC-Q100 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (2M x 32) 167MHz 5.4ns 12ns
MT48LC2M32B2P-6A AAT:J TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
Automotive,AEC-Q100 3 V ~ 3.6 V -40°C ~ 105°C (TA) 64Mb (2M x 32) 167MHz 5.4ns 12ns
MT48LC4M32B2P-6A XIT:L TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 128M PARALLEL 86TSOP II
- 3 V ~ 3.6 V -40°C ~ 85°C (TA) 128Mb (4M x 32) 167MHz 5.4ns 12ns
MT48LC4M32B2P-6A AAT:L TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 128M PARALLEL 86TSOP II
Automotive,AEC-Q100 3 V ~ 3.6 V -40°C ~ 105°C (TA) 128Mb (4M x 32) 167MHz 5.4ns 12ns
AS4C2M32SA-6TCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 64Mb (2M x 32) 166MHz 5.5ns 2ns
AS4C2M32SA-7TCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 64Mb (2M x 32) 143MHz 5.5ns 2ns
IS42S32200L-7TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 64Mb (2M x 32) 143MHz 5.4ns -
IS42S32200L-6TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 64Mb (2M x 32) 166MHz 5.4ns -
IS42S32200L-5TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 64Mb (2M x 32) 200MHz 4.8ns -
IS45S32200L-7TLA1-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
- 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (2M x 32) 143MHz 5.4ns -
IS42S32200L-7TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
- 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (2M x 32) 143MHz 5.4ns -
AS4C4M32SA-6TCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 128M PARALLEL 86TSOP II
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 128Mb (4M x 32) 166MHz 5.4ns 2ns
AS4C4M32SA-7TCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 128M PARALLEL 86TSOP II
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 128Mb (4M x 32) 143MHz 5.4ns 2ns
IS45S32200L-6TLA1-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
- 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (2M x 32) 166MHz 5.4ns -
IS42S32200L-6TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
- 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (2M x 32) 166MHz 5.4ns -
AS4C2M32SA-6TINTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
- 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (2M x 32) 166MHz 5.5ns 2ns
IS42S32400F-7TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 128M PARALLEL 86TSOP II
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 128Mb (4M x 32) 143MHz 5.4ns -
IS42S32400F-6TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 128M PARALLEL 86TSOP II
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 128Mb (4M x 32) 166MHz 5.4ns -
IS45S32400F-7TLA1-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 128M PARALLEL 86TSOP II
- 3 V ~ 3.6 V -40°C ~ 85°C (TA) 128Mb (4M x 32) 143MHz 5.4ns -