- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Memory Size:
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- Technology:
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- Clock Frequency:
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- Write Cycle Time - Word, Page:
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- Conditions sélectionnées:
Découvrez les produits 698
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Clock Frequency | Write Cycle Time - Word, Page | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Clock Frequency | Write Cycle Time - Word, Page | ||
ISSI,Integrated Silicon Solution Inc |
2,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 64M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 64Mb (4M x 16) | SDRAM | 143MHz | - | ||||
Alliance Memory,Inc. |
6,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | 167MHz | 12ns | ||||
Alliance Memory,Inc. |
7,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
Cut Tape (CT) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | 167MHz | 12ns | ||||
Alliance Memory,Inc. |
7,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
- | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | 167MHz | 12ns | ||||
Alliance Memory,Inc. |
7,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 128M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | 143MHz | 14ns | ||||
ISSI,Integrated Silicon Solution Inc |
659
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 128M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | 143MHz | - | ||||
Alliance Memory,Inc. |
1,545
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | 143MHz | 14ns | ||||
ISSI,Integrated Silicon Solution Inc |
1,143
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | 143MHz | - | ||||
ISSI,Integrated Silicon Solution Inc |
3,765
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | 143MHz | - | ||||
Micron Technology Inc. |
16,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | 167MHz | 12ns | ||||
Micron Technology Inc. |
16,464
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
Cut Tape (CT) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | 167MHz | 12ns | ||||
Micron Technology Inc. |
16,464
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
- | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | 167MHz | 12ns | ||||
Alliance Memory,Inc. |
1,405
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP II | 512Mb (32M x 16) | SDRAM | 143MHz | 14ns | ||||
Alliance Memory,Inc. |
1,226
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP II | 512Mb (64M x 8) | SDRAM | 133MHz | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
915
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP II | 512Mb (32M x 16) | SDRAM | 143MHz | - | ||||
Alliance Memory,Inc. |
1,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 512Mb (32M x 16) | SDRAM | 143MHz | 14ns | ||||
ISSI,Integrated Silicon Solution Inc |
461
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 512Mb (32M x 16) | SDRAM | 143MHz | - | ||||
Alliance Memory,Inc. |
863
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 512Mb (64M x 8) | SDRAM | 133MHz | 15ns | ||||
Alliance Memory,Inc. |
332
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 512Mb (32M x 16) | SDRAM | 143MHz | 2ns | ||||
ISSI,Integrated Silicon Solution Inc |
1,190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 54TSOP
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP II | 512Mb (32M x 16) | SDRAM | 143MHz | - |