Conditions sélectionnées:
Découvrez les produits 67
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Supplier Device Package Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Write Cycle Time - Word, Page
IS43LD32640B-25BPL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 2G PARALLEL 400MHZ
Tape & Reel (TR) 1.14 V ~ 1.95 V -40°C ~ 85°C (TC) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR2-S4 DRAM 400MHz - 15ns
IS43LD32640B-18BPL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 2G PARALLEL 533MHZ
Tape & Reel (TR) 1.14 V ~ 1.95 V -40°C ~ 85°C (TC) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR2-S4 DRAM 533MHz - 15ns
IS43LD32640B-25BPL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 168  MPQ: 1
IC DRAM 2G PARALLEL 400MHZ
Tray 1.14 V ~ 1.95 V -40°C ~ 85°C (TC) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR2-S4 DRAM 400MHz - 15ns
IS43LD32640B-25BPLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 2G PARALLEL 400MHZ
Tape & Reel (TR) 1.14 V ~ 1.95 V -40°C ~ 85°C (TC) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR2-S4 DRAM 400MHz - 15ns
IS43LD32640B-18BPL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 168  MPQ: 1
IC DRAM 2G PARALLEL 533MHZ
Tray 1.14 V ~ 1.95 V -40°C ~ 85°C (TC) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR2-S4 DRAM 533MHz - 15ns
IS43LD32640B-18BPLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 2G PARALLEL 533MHZ
Tape & Reel (TR) 1.14 V ~ 1.95 V -40°C ~ 85°C (TC) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR2-S4 DRAM 533MHz - 15ns
IS43LD32640B-25BPLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 168  MPQ: 1
IC DRAM 2G PARALLEL 400MHZ
Tray 1.14 V ~ 1.95 V -40°C ~ 85°C (TC) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR2-S4 DRAM 400MHz - 15ns
IS43LD32640B-18BPLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 168  MPQ: 1
IC DRAM 2G PARALLEL 533MHZ
Tray 1.14 V ~ 1.95 V -40°C ~ 85°C (TC) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR2-S4 DRAM 533MHz - 15ns
MT46H32M32LFJG-5 IT:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 168VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 168-VFBGA (12x12) 1Gb (32M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5.0ns 15ns
MT29C2G48MAKLCJI-6 IT
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 2G PARALLEL 166MHZ
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) - 2Gb (128M x 16)(NAND),1Gb (32M x 32)(LPDRAM) Non-Volatile FLASH - NAND,Mobile LPDRAM FLASH,RAM 166MHz - -
MT29C2G48MAKLCJI-6 IT TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 2G PARALLEL 166MHZ
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) - 2Gb (128M x 16)(NAND),1Gb (32M x 32)(LPDRAM) Non-Volatile FLASH - NAND,Mobile LPDRAM FLASH,RAM 166MHz - -
MT46H32M32LFJG-5 IT:A TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 168VFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 168-VFBGA (12x12) 1Gb (32M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5.0ns 15ns
MT46H32M32LFJG-6 IT:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 168VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 168-VFBGA (12x12) 1Gb (32M x 32) Volatile SDRAM - Mobile LPDDR DRAM 166MHz 5.0ns 15ns
MT46H32M32LFJG-6 IT:A TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 168VFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 168-VFBGA (12x12) 1Gb (32M x 32) Volatile SDRAM - Mobile LPDDR DRAM 166MHz 5.0ns 15ns
MT46H32M32LFJG-6:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 168VFBGA
Tray 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 168-VFBGA (12x12) 1Gb (32M x 32) Volatile SDRAM - Mobile LPDDR DRAM 166MHz 5.0ns 15ns
MT46H32M32LFJG-6:A TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 168VFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 168-VFBGA (12x12) 1Gb (32M x 32) Volatile SDRAM - Mobile LPDDR DRAM 166MHz 5.0ns 15ns
MT46H64M32L2JG-5 IT:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 168VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5.0ns 15ns
MT46H64M32L2JG-5 IT:A TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 168VFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5.0ns 15ns
MT46H64M32L2JG-5:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 168VFBGA
Tray 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5.0ns 15ns
MT46H64M32L2JG-5:A TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 168VFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 168-VFBGA (12x12) 2Gb (64M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5.0ns 15ns