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Découvrez les produits 55
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Supplier Device Package | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Supplier Device Package | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Honeywell Aerospace |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
HTMOS | -55°C ~ 225°C (TA) | 28-CDIP | 256Kb (32K x 8) | Volatile | SRAM | SRAM | 20MHz | 50ns | 50ns | ||
|
|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 30 MPQ: 1
|
IC EEPROM 64K PARALLEL 28CERDIP
|
- | 0°C ~ 70°C (TA) | 28-CerDip | 64K (8K x 8) | Non-Volatile | EEPROM | EEPROM | - | 90ns | 5ms | ||
|
|
IDT，Integrated Device Technology Inc |
612
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 45ns | 45ns | |||
|
|
IDT，Integrated Device Technology Inc |
65
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 70ns | 70ns | |||
|
|
IDT，Integrated Device Technology Inc |
46
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | - | - | |||
|
|
Microchip Technology |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 250ns | 10ms | |||
|
|
Microchip Technology |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 200ns | 10ms | |||
|
|
Microchip Technology |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 250ns | 10ms | |||
|
|
Microchip Technology |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | 3ms | |||
|
|
Microchip Technology |
12
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 200ns | 10ms | |||
|
|
Microchip Technology |
12
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | 10ms | |||
|
|
Microchip Technology |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | 10ms | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 64K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | - | - | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 100ns | 100ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 25ns | 25ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 35ns | 35ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 45ns | 45ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 55ns | 55ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 70ns | 70ns | |||
|
|
IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CERDIP
|
- | -55°C ~ 125°C (TA) | 28-CerDip | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 85ns | 85ns |
