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Découvrez les produits 14
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Viking Technology |
Enquête
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- |
-
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MOQ: 5 MPQ: 1
|
IC DRAM 4G PARALLEL 1.2GHZ
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- | - | 1.2V | - | - | - | 4Gb (512M x 8) | Volatile | SDRAM - DDR4 | DRAM | 1.2GHz | - | - | ||
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Viking Technology |
Enquête
|
- |
-
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MOQ: 5 MPQ: 1
|
IC DRAM 4G PARALLEL 1.2GHZ
|
- | - | 1.2V | - | - | - | 4Gb (512M x 8) | Volatile | SDRAM - DDR4 | DRAM | 1.2GHz | - | - | ||
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|
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Viking Technology |
Enquête
|
- |
-
|
MOQ: 5 MPQ: 1
|
IC DRAM 4G PARALLEL 1.2GHZ
|
- | - | 1.2V | - | - | - | 4Gb (512M x 8) | Volatile | SDRAM - DDR4 | DRAM | 1.2GHz | - | - | ||
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Viking Technology |
Enquête
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- |
-
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MOQ: 5 MPQ: 1
|
IC DRAM 4G PARALLEL 1.2GHZ
|
- | - | 1.2V | - | - | - | 4Gb (512M x 8) | Volatile | SDRAM - DDR4 | DRAM | 1.2GHz | - | - | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC FLASH 1G PARALLEL 64FBGA
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Tray | GL-P | - | 64-LBGA | 64-FBGA (11x13) | Surface Mount | 1Gb (128M x 8) | Non-Volatile | FLASH - NOR | Flash | - | - | - | |||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
|
IC FLASH 1G PARALLEL 64FBGA
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Bulk | GL-P | - | 64-LBGA | 64-FBGA (13x11) | Surface Mount | 1Gb (128M x 8) | Non-Volatile | FLASH - NOR | Flash | - | - | - | |||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC FLASH 32M PARALLEL
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- | - | 2.7 V ~ 3.6 V | - | - | - | 32Mb (4M x 8) | Non-Volatile | FLASH - NOR | Flash | - | 45ns | 45ns | ||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC FLASH 32M PARALLEL
|
- | - | 2.7 V ~ 3.6 V | - | - | - | 32Mb (4M x 8) | Non-Volatile | FLASH - NOR | Flash | - | 45ns | 45ns | ||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL WAFER
|
- | - | 1.7 V ~ 1.9 V | - | - | - | 512Mb (32M x 16) | Volatile | SDRAM - DDR2 | DRAM | - | - | - | |||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
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IC FLASH 16M PARALLEL DIE
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Tape & Reel (TR) | - | 2.7 V ~ 3.6 V | - | - | - | 16Mb (512K x 32) | Non-Volatile | FLASH - NOR | Flash | - | 70ns | - | |||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC NVSRAM 256K PARALLEL
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- | - | - | - | - | - | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | - | - | |||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC EEPROM 256KBIT
|
Tube | - | 4.5 V ~ 5.5 V | - | - | - | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | - | 5ms | |||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRAM 8G PARALLEL
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- | - | 1.14 V ~ 1.95 V | - | - | - | 8Gb (512M x 16) | Volatile | SDRAM - Mobile LPDDR3 | DRAM | - | - | - | |||
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 8G PARALLEL
|
- | - | 1.14 V ~ 1.95 V | - | - | - | 8Gb (512M x 16) | Volatile | SDRAM - Mobile LPDDR3 | DRAM | - | - | - |
