Mounting Type:
Memory Interface:
Write Cycle Time - Word, Page:
Découvrez les produits 117
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Package / Case Supplier Device Package Mounting Type Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
W949D2DBJX5E TR
Winbond Electronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V 90-TFBGA 90-VFBGA (8x13) Surface Mount 512Mb (16M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W949D2DBJX5E TR
Winbond Electronics
2,500
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Cut Tape (CT) - 1.7 V ~ 1.95 V 90-TFBGA 90-VFBGA (8x13) Surface Mount 512Mb (16M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W949D2DBJX5E TR
Winbond Electronics
2,500
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
- - 1.7 V ~ 1.95 V 90-TFBGA 90-VFBGA (8x13) Surface Mount 512Mb (16M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W947D6HBHX5E
Winbond Electronics
245
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Tray - 1.7 V ~ 1.95 V 60-TFBGA 60-VFBGA (8x9) Surface Mount 128Mb (8M x 16) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W948D2FBJX5E
Winbond Electronics
151
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
Tray - 1.7 V ~ 1.95 V 90-TFBGA 90-VFBGA (8x13) Surface Mount 256Mb (8M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W978H6KBVX2E
Winbond Electronics
4,611
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 134VFBGA
Tray - 1.14 V ~ 1.95 V 134-VFBGA 134-VFBGA (10x11.5) Surface Mount 256Mb (16M x 16) Volatile SDRAM - Mobile LPDDR2 DRAM 400MHz - Parallel 15ns
W947D6HBHX5E TR
Winbond Electronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V 60-TFBGA 60-VFBGA (8x9) Surface Mount 128Mb (8M x 16) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W947D6HBHX5E TR
Winbond Electronics
1,945
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Cut Tape (CT) - 1.7 V ~ 1.95 V 60-TFBGA 60-VFBGA (8x9) Surface Mount 128Mb (8M x 16) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W947D6HBHX5E TR
Winbond Electronics
1,945
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
- - 1.7 V ~ 1.95 V 60-TFBGA 60-VFBGA (8x9) Surface Mount 128Mb (8M x 16) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W948D2FBJX5E TR
Winbond Electronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V 90-TFBGA 90-VFBGA (8x13) Surface Mount 256Mb (8M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W948D2FBJX5E TR
Winbond Electronics
2,400
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
Cut Tape (CT) - 1.7 V ~ 1.95 V 90-TFBGA 90-VFBGA (8x13) Surface Mount 256Mb (8M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W948D2FBJX5E TR
Winbond Electronics
2,400
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
- - 1.7 V ~ 1.95 V 90-TFBGA 90-VFBGA (8x13) Surface Mount 256Mb (8M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W949D2DBJX5E
Winbond Electronics
45
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Tray - 1.7 V ~ 1.95 V 90-TFBGA 90-VFBGA (8x13) Surface Mount 512Mb (16M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
THGAF8G9T43BAIR
Toshiba Memory America,Inc.
9
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 512G UFS 153VFBGA
Tray Consumer UFS 2.7 V ~ 3.6 V 153-VFBGA 153-VFBGA (11.5x13) Surface Mount 512Gb (64G x 8) Non-Volatile FLASH - NAND Flash - - UFS -
THGAF8T0T43BAIR
Toshiba Memory America,Inc.
44
3 jours
-
MOQ: 1  MPQ: 1
128GB VER. 2.1 UFS UNIVERSAL FLA
Tray Consumer UFS 2.7 V ~ 3.6 V 153-VFBGA 153-VFBGA (11.5x13) Surface Mount 1Tb (128G x 8) Non-Volatile FLASH - NAND Flash - - UFS -
THGAF8T1T83BAIR
Toshiba Memory America,Inc.
15
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 2T UFS 153VFBGA
Tray Consumer UFS 2.7 V ~ 3.6 V 153-VFBGA 153-VFBGA (11.5x13) Surface Mount 2Tb (256G x 8) Non-Volatile FLASH - NAND Flash - - UFS -
RD28F1604C3TD70SB93
Intel
38
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 16MIT PARAL 66SCSP
Tray - 2.7 V ~ 3.3 V 66-LFBGA,CSPBGA 66-SCSP (8x12) Surface Mount 16Mbit Flash,4Mbit RAM Non-Volatile FLASH,SRAM FLASH,RAM - 70ns Parallel 70ns
THGAF8G8T23BAIL
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH 256G UFS 153WFBGA
Tray Consumer UFS 2.7 V ~ 3.6 V 153-WFBGA 153-WFBGA (11.5x13) Surface Mount 256Gb (32G x 8) Non-Volatile FLASH - NAND Flash - - UFS -
W947D6HBHX6E TR
Winbond Electronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V 60-TFBGA 60-VFBGA (8x9) Surface Mount 128Mb (8M x 16) Volatile SDRAM - Mobile LPDDR DRAM 166MHz 5ns Parallel 15ns
W987D6HBGX6E TR
Winbond Electronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 54VFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V 54-TFBGA 54-VFBGA (8x9) Surface Mount 128Mb (8M x 16) Volatile SDRAM - Mobile LPSDR DRAM 166MHz 5.4ns Parallel 15ns