Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

Memory Size：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Memory Interface：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
	IS43R16320D-6TL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 66TSOP II MOQ: 216 MPQ: 1	IC DRAM 512M PARALLEL 66TSOP II	Tray	-	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	512Mb (32M x 16)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	IS43R86400D-6TL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 66TSOP II MOQ: 216 MPQ: 1	IC DRAM 512M PARALLEL 66TSOP II	Tray	-	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	512Mb (64M x 8)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	IS43R16160F-6BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 380 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tray	-	0°C ~ 70°C (TA)	60-TFBGA	60-TFBGA (13x8)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	IS43R16160F-5BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	60-TFBGA	60-TFBGA (13x8)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS46R16160F-6TLA1-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	IS42RM16800H-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 128M PARALLEL 54TFBGA MOQ: 2500 MPQ: 1	IC DRAM 128M PARALLEL 54TFBGA	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	54-TFBGA	54-TFBGA (8x8)	128Mb (8M x 16)	Volatile	SDRAM - Mobile	DRAM	133MHz	6ns	Parallel	-
	IS43R16160F-5BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 380 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tray	-	0°C ~ 70°C (TA)	60-TFBGA	60-TFBGA (13x8)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	W9425G6JB-5I	Winbond Electronics	Enquête	-	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 209 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tray	-	-40°C ~ 85°C (TA)	60-TFBGA	60-TFBGA (8x13)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	55ns	Parallel	15ns
	IS43R32400E-5BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 128M PARALLEL 144LFBGA MOQ: 1500 MPQ: 1	IC DRAM 128M PARALLEL 144LFBGA	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	144-LFBGA	144-LFBGA (12x12)	128Mb (4M x 32)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS46R16160F-5TLA1-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS42RM16800H-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 128M PARALLEL 54TFBGA MOQ: 2500 MPQ: 1	IC DRAM 128M PARALLEL 54TFBGA	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	54-TFBGA	54-TFBGA (8x8)	128Mb (8M x 16)	Volatile	SDRAM - Mobile	DRAM	166MHz	5.5ns	Parallel	-
	AS4C32M16D1-5TIN	Alliance Memory，Inc.	1	3 jours	-	IC DRAM 512M PARALLEL 66TSOP II MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 66TSOP II	Tray	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	512Mb (32M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS43R16160D-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	60-TFBGA	60-TFBGA (8x13)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	IS43R83200D-6TL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (32M x 8)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	IS46R16160F-6TLA1	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 216 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tray	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	IS43R16160D-5BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	60-TFBGA	60-TFBGA (8x13)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS42RM32400H-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 128M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 128M PARALLEL 90TFBGA	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	90-TFBGA	90-TFBGA (8x13)	128Mb (4M x 32)	Volatile	SDRAM - Mobile	DRAM	166MHz	5.5ns	Parallel	-
	IS42RM16800H-75BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 128M PARALLEL 54TFBGA MOQ: 348 MPQ: 1	IC DRAM 128M PARALLEL 54TFBGA	Tray	-	-40°C ~ 85°C (TA)	54-TFBGA	54-TFBGA (8x8)	128Mb (8M x 16)	Volatile	SDRAM - Mobile	DRAM	133MHz	6ns	Parallel	-
	IS43R32400E-5BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 128M PARALLEL 144LFBGA MOQ: 1500 MPQ: 1	IC DRAM 128M PARALLEL 144LFBGA	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	144-LFBGA	144-LFBGA (12x12)	128Mb (4M x 32)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS43R83200D-5TL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (32M x 8)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns

Envoyé avec succès!