Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

Memory Size：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Memory Interface：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
	IS43R83200F-5TL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (32M x 8)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	AS4C16M16D1A-5TINTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	AS4C4M32D1A-5BCNTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 144LFBGA MOQ: 1500 MPQ: 1	IC DRAM 128M PARALLEL 144LFBGA	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	144-LFBGA	144-LFBGA (12x12)	128Mb (4M x 32)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	12ns
	IS43R16160D-5TL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 324 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tray	-	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS43R83200F-6TL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 324 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tray	-	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (32M x 8)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	AS4C64M8D1-5TCN	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 66TSOP II MOQ: 108 MPQ: 1	IC DRAM 512M PARALLEL 66TSOP II	Tray	-	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	512Mb (64M x 8)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	AS4C16M16D1-5BCNTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	60-TFBGA	60-TFBGA (8x13)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS43R16160D-6TLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	IS43R16160F-5TLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 324 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tray	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS43R83200F-5TL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 324 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tray	-	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (32M x 8)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	AS4C64M8D1-5BCNTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	60-TFBGA	60-FBGA (8x13)	512Mb (64M x 8)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	W9425G6JB-5 TR	Winbond Electronics	Enquête	-	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	60-TFBGA	60-TFBGA (8x13)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	55ns	Parallel	15ns
	IS43R16160D-5TLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS43R83200F-6TLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (32M x 8)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	AS4C32M8D1-5TINTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (32M x 8)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	AS4C32M16D1-5BCNTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60BGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 60BGA	Tape & Reel (TR)	-	0°C ~ 70°C (TA)	60-TFBGA	60-BGA	512Mb (32M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	AS4C32M16D1A-5TINTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 66TSOP II MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 66TSOP II	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	512Mb (32M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	IS43R16160D-6TLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 324 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tray	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	AS4C4M32D1A-5BINTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 144LFBGA MOQ: 1500 MPQ: 1	IC DRAM 128M PARALLEL 144LFBGA	Tape & Reel (TR)	-	-40°C ~ 85°C (TA)	144-LFBGA	144-LFBGA (12x12)	128Mb (4M x 32)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	12ns
	AS4C64M8D1-5TINTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 66TSOP II MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 66TSOP II	Tray	-	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	512Mb (64M x 8)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns

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