Memory Format:
Memory Interface:
Write Cycle Time - Word, Page:
Conditions sélectionnées:
Découvrez les produits 734
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Package / Case Supplier Device Package Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
AS4C32M16D1A-5TIN
Alliance Memory,Inc.
1,812
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 66TSOP II
Tray - -40°C ~ 85°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 512Mb (32M x 16) Volatile SDRAM - DDR DRAM 200MHz 700ps Parallel 15ns
AS4C16M16D1A-5TCN
Alliance Memory,Inc.
930
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 66TSOP II
Tray - 0°C ~ 70°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 256Mb (16M x 16) Volatile SDRAM - DDR DRAM 200MHz 700ps Parallel 15ns
IS43R16160D-6TL
ISSI,Integrated Silicon Solution Inc
1,404
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 66TSOP II
Tray - 0°C ~ 70°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 256Mb (16M x 16) Volatile SDRAM - DDR DRAM 166MHz 700ps Parallel 15ns
IS43R16160F-6TLI
ISSI,Integrated Silicon Solution Inc
634
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 66TSOP II
Tray - -40°C ~ 85°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 256Mb (16M x 16) Volatile SDRAM - DDR DRAM 166MHz 700ps Parallel 15ns
AS4C64M16D1A-6TIN
Alliance Memory,Inc.
107
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 66TSOP II
Bulk - -40°C ~ 85°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 1Gb (64M x 16) Volatile SDRAM - DDR DRAM 166MHz 700ps Parallel 15ns
IS43R16160F-6TL
ISSI,Integrated Silicon Solution Inc
666
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 66TSOP II
Tray - 0°C ~ 70°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 256Mb (16M x 16) Volatile SDRAM - DDR DRAM 166MHz 700ps Parallel 15ns
AS4C64M16D1-6TIN
Alliance Memory,Inc.
201
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 66TSOP II
Bulk - -40°C ~ 85°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 1Gb (64M x 16) Volatile SDRAM - DDR DRAM 166MHz 700ps Parallel 15ns
AS4C4M16D1A-5TCN
Alliance Memory,Inc.
1,171
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 64M PARALLEL 66TSOP II
Tray - 0°C ~ 70°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 64Mb (4M x 16) Volatile SDRAM - DDR DRAM 200MHz 700ps Parallel 15ns
IS43R83200F-6TLI
ISSI,Integrated Silicon Solution Inc
108
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 66TSOP II
Tray - -40°C ~ 85°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 256Mb (32M x 8) Volatile SDRAM - DDR DRAM 166MHz 700ps Parallel 15ns
IS43R16160F-6BLI
ISSI,Integrated Silicon Solution Inc
190
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 60TFBGA
Tray - -40°C ~ 85°C (TA) 60-TFBGA 60-TFBGA (13x8) 256Mb (16M x 16) Volatile SDRAM - DDR DRAM 166MHz 700ps Parallel 15ns
AS4C2M32D1A-5BIN
Alliance Memory,Inc.
189
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 64M PARALLEL 144LFBGA
Tray - -40°C ~ 85°C (TA) 144-LFBGA 144-LFBGA (12x12) 64Mb (2M x 32) Volatile SDRAM - DDR DRAM 200MHz 700ps Parallel 15ns
AS4C4M32D1A-5BCN
Alliance Memory,Inc.
189
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 144LFBGA
Tray - 0°C ~ 70°C (TA) 144-LFBGA 144-LFBGA (12x12) 128Mb (4M x 32) Volatile SDRAM - DDR DRAM 200MHz 700ps Parallel 12ns
AS4C16M16D1-5BCN
Alliance Memory,Inc.
192
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 60TFBGA
Tray - 0°C ~ 70°C (TA) 60-TFBGA 60-TFBGA (8x13) 256Mb (16M x 16) Volatile SDRAM - DDR DRAM 200MHz 700ps Parallel 15ns
IS43R16320F-6TL
ISSI,Integrated Silicon Solution Inc
324
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 66TSOP II
Tray - 0°C ~ 70°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 512Mb (32M x 16) Volatile SDRAM - DDR DRAM 167MHz 700ps Parallel 15ns
AS4C4M32D1A-5BIN
Alliance Memory,Inc.
169
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 144LFBGA
Tray - -40°C ~ 85°C (TA) 144-LFBGA 144-LFBGA (12x12) 128Mb (4M x 32) Volatile SDRAM - DDR DRAM 200MHz 700ps Parallel 12ns
IS43R16320F-6TLI
ISSI,Integrated Silicon Solution Inc
216
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 66TSOP II
Tray - -40°C ~ 85°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 512Mb (32M x 16) Volatile SDRAM - DDR DRAM 167MHz 700ps Parallel 15ns
MT46V32M4TG-6T:D TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 128M PARALLEL 66TSOP
Tape & Reel (TR) - 0°C ~ 70°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP 128Mb (32M x 4) Volatile SDRAM - DDR DRAM 167MHz 700ps Parallel 15ns
MT46V32M4TG-6T:D TR
Micron Technology Inc.
189
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 66TSOP
Cut Tape (CT) - 0°C ~ 70°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP 128Mb (32M x 4) Volatile SDRAM - DDR DRAM 167MHz 700ps Parallel 15ns
MT46V16M8TG-6T L:D TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 128M PARALLEL 66TSOP
Tape & Reel (TR) - 0°C ~ 70°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP 128Mb (16M x 8) Volatile SDRAM - DDR DRAM 167MHz 700ps Parallel 15ns
MT46V16M8TG-6T L:D TR
Micron Technology Inc.
165
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 66TSOP
Cut Tape (CT) - 0°C ~ 70°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP 128Mb (16M x 8) Volatile SDRAM - DDR DRAM 167MHz 700ps Parallel 15ns