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Découvrez les produits 47
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Package / Case Supplier Device Package Mounting Type Memory Size Technology Clock Frequency
MT29RZ4B2DZZHHWD-18I.84F TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tape & Reel (TR) -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ4B2DZZHHWD-18I.84F TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Cut Tape (CT) -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ4B2DZZHHWD-18I.84F TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
- -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ4B4DZZMGWD-18I.80C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tape & Reel (TR) -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ4B4DZZMGWD-18I.80C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Cut Tape (CT) -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ4B4DZZMGWD-18I.80C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
- -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ2B1DZZHGWD-18I.83G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
Tape & Reel (TR) -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ2B1DZZHGWD-18I.83G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
Cut Tape (CT) -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ2B1DZZHGWD-18I.83G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
- -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ4B2DZZHHWD-18I.84F
Micron Technology Inc.
Enquête
-
-
MOQ: 1440  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tray -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ2B1DZZHGWD-18I.83G
Micron Technology Inc.
Enquête
-
-
MOQ: 1440  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
Tray -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ4B4DZZMGWD-18I.80C
Micron Technology Inc.
Enquête
-
-
MOQ: 1440  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tray -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ1CVCZZHGTN-18 I.85H TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 1G PARALLEL 533MHZ
Tape & Reel (TR) -40°C ~ 85°C (TA) - - Surface Mount 1Gb (128M x 8)(NAND),512M (32M x 16)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ1CVCZZHGTN-18 I.85H TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 1G PARALLEL 533MHZ
Cut Tape (CT) -40°C ~ 85°C (TA) - - Surface Mount 1Gb (128M x 8)(NAND),512M (32M x 16)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ1CVCZZHGTN-18 I.85H TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 1G PARALLEL 533MHZ
- -40°C ~ 85°C (TA) - - Surface Mount 1Gb (128M x 8)(NAND),512M (32M x 16)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ2B2DZZHHTB-18I.88F TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
Tape & Reel (TR) -40°C ~ 85°C (TA) - - - 2Gb (256M x 8)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ2B2DZZHHTB-18I.88F TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
Cut Tape (CT) -40°C ~ 85°C (TA) - - - 2Gb (256M x 8)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ2B2DZZHHTB-18I.88F TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
- -40°C ~ 85°C (TA) - - - 2Gb (256M x 8)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ4B2DZZHGSK-18 W.80E TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tape & Reel (TR) -25°C ~ 85°C (TA) - - - 4Gb (512M x 8)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz
MT29RZ4B2DZZHGSK-18 W.80E
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
- -25°C ~ 85°C (TA) - - - 4Gb (512M x 8)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz