Mémoire - Zui Ai Technology（Taiwan）Company.

Conditions sélectionnées:

Découvrez les produits 26

Comparer Ajouter au panier Ajouter au devis

Page 1 / 2

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Operating Temperature	Memory Size	Technology	Clock Frequency	Access Time
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Operating Temperature	Memory Size	Technology	Clock Frequency	Access Time
	MT41K512M8DA-125:P	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 800MHZ MOQ: 1440 MPQ: 1	IC DRAM 4G PARALLEL 800MHZ	-	0°C ~ 95°C (TC)	4Gb (512M x 8)	SDRAM - DDR3L	800MHz	13.5ns
	MT41K1G4RG-107:N	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 1260 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	-	0°C ~ 95°C (TC)	4Gb (1G x 4)	SDRAM - DDR3L	933MHz	20ns
	MT41K256M16TW-107 AUT:P	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 1368 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	-	-40°C ~ 125°C (TC)	4Gb (256M x 16)	SDRAM - DDR3L	933MHz	20ns
	MT41K1G4RG-107:N TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 2000 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	Tape & Reel (TR)	0°C ~ 95°C (TC)	4Gb (1G x 4)	SDRAM - DDR3L	933MHz	20ns
	MT41K256M16TW-107 AUT:P TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 2000 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	Tape & Reel (TR)	-40°C ~ 125°C (TC)	4Gb (256M x 16)	SDRAM - DDR3L	933MHz	20ns
	MT41K512M8DA-125:P TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 800MHZ MOQ: 2000 MPQ: 1	IC DRAM 4G PARALLEL 800MHZ	Tape & Reel (TR)	0°C ~ 95°C (TC)	4Gb (512M x 8)	SDRAM - DDR3L	800MHz	13.5ns
	MT41K256M16TW-125:P	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 800MHZ MOQ: 0 MPQ: 1	IC DRAM 4G PARALLEL 800MHZ	-	0°C ~ 95°C (TC)	4Gb (256M x 16)	SDRAM - DDR3L	800MHz	20ns
	MT41K256M16V80AWC1	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL DIE MOQ: 1 MPQ: 1	IC DRAM 4G PARALLEL DIE	-	0°C ~ 95°C (TC)	4Gb (256M x 16)	SDRAM - DDR3L	-	-
	MT41K512M8V80AWC1	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL DIE MOQ: 1 MPQ: 1	IC DRAM 4G PARALLEL DIE	-	0°C ~ 95°C (TC)	4Gb (512M x 8)	SDRAM - DDR3L	-	-
	MT41K512M8V00HWC1	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL DIE MOQ: 1 MPQ: 1	IC DRAM 4G PARALLEL DIE	-	0°C ~ 95°C (TC)	4Gb (512M x 8)	SDRAM - DDR3L	-	-
	W632GU6AB-11	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 933MHZ MOQ: 0 MPQ: 1	IC DRAM 2G PARALLEL 933MHZ	-	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	933MHz	20ns
	W632GU6AB-12	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 800MHZ MOQ: 0 MPQ: 1	IC DRAM 2G PARALLEL 800MHZ	-	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	800MHz	20ns
	W632GU6AB-15	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 0 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	-	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	667MHz	20ns
	W632GU8AB-11	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 933MHZ MOQ: 0 MPQ: 1	IC DRAM 2G PARALLEL 933MHZ	-	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	933MHz	20ns
	W632GU8AB-12	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 800MHZ MOQ: 0 MPQ: 1	IC DRAM 2G PARALLEL 800MHZ	-	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	800MHz	20ns
	W632GU8AB-15	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 0 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	-	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	667MHz	20ns
	MT41K256M16TW-107 V:P	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 1368 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	-	0°C ~ 95°C (TC)	4Gb (256M x 16)	SDRAM - DDR3L	933MHz	20ns
	MT41K512M8DA-107 V:P	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 1440 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	-	0°C ~ 95°C (TC)	4Gb (512M x 8)	SDRAM - DDR3L	933MHz	20ns
	MT41K256M16TW-107 V:P TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 2000 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	Tape & Reel (TR)	0°C ~ 95°C (TC)	4Gb (256M x 16)	SDRAM - DDR3L	933MHz	20ns
	MT41K512M8DA-107 V:P TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 2000 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	Tape & Reel (TR)	0°C ~ 95°C (TC)	4Gb (512M x 8)	SDRAM - DDR3L	933MHz	20ns