- Packaging：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Memory Size：
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- Memory Type：
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- Technology：
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- Memory Format：
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- Write Cycle Time - Word, Page：
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- Conditions sélectionnées:
Découvrez les produits 168
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Write Cycle Time - Word, Page | |
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STMicroelectronics |
584
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NVSRAM 64K PARALLEL 28PCDIP
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Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-PCDIP，CAPHAT? | Through Hole | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
335
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NVSRAM 256K PARALLEL 28EDIP
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Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
383
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NVSRAM 1M PARALLEL 32EDIP
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Tube | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
385
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NVSRAM 16K PARALLEL 24EDIP
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Tube | -40°C ~ 85°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
136
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NVSRAM 1M PARALLEL 34PWRCAP
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Tray | 0°C ~ 70°C (TA) | 34-PowerCap? Module | 34-PowerCap Module | Surface Mount | 1Mb (128K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
141
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NVSRAM 16K PARALLEL 24EDIP
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Tube | 0°C ~ 70°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
6
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NVSRAM 2M PARALLEL 32EDIP
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Tube | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 2Mb (256K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
12
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NVSRAM 4M PARALLEL 32EDIP
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Tube | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 4Mb (512K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
11
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NVSRAM 4M PARALLEL 32EDIP
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Tube | -40°C ~ 85°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 4Mb (512K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
80
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NVSRAM 256K PARALLEL 34PWRCAP
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Tray | 0°C ~ 70°C (TA) | 34-PowerCap? Module | 34-PowerCap Module | Surface Mount | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 40 MPQ: 1
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IC NVSRAM 256K PARALLEL 34PWRCAP
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Tube | 0°C ~ 70°C (TA) | 34-PowerCap? Module | 34-PowerCap Module | Surface Mount | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 20 MPQ: 1
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IC NVSRAM 1M PARALLEL 34PWRCAP
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Tube | 0°C ~ 70°C (TA) | 34-PowerCap? Module | 34-PowerCap Module | Surface Mount | 1Mb (128K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 28 MPQ: 1
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IC NVSRAM 256K PARALLEL 28DIP
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Tray | 0°C ~ 70°C (TA) | 28-DIP Module (0.61"，15.49mm) | 28-DIP Module (18.42x37.72) | Through Hole | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 72 MPQ: 1
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IC FLASH 4M PARALLEL 32DIP
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Tube | 0°C ~ 70°C (TC) | 32-DIP (0.600"，15.24mm) | 32-PDIP | Through Hole | 4Mb (512K x 8) | Non-Volatile | Flash | Flash | 10ms | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 60 MPQ: 1
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IC FLASH 4M PARALLEL 32DIP
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Tube | -40°C ~ 85°C (TC) | 32-DIP (0.600"，15.24mm) | 32-PDIP | Through Hole | 4Mb (512K x 8) | Non-Volatile | Flash | Flash | 10ms | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 156 MPQ: 1
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IC FLASH 4M PARALLEL 32TSOP
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Tray | 0°C ~ 70°C (TC) | 32-TFSOP (0.724"，18.40mm Width) | 32-TSOP | Surface Mount | 4Mb (512K x 8) | Non-Volatile | Flash | Flash | 10ms | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 156 MPQ: 1
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IC FLASH 4M PARALLEL 32TSOP
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Tray | -40°C ~ 85°C (TC) | 32-TFSOP (0.724"，18.40mm Width) | 32-TSOP | Surface Mount | 4Mb (512K x 8) | Non-Volatile | Flash | Flash | 10ms | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 11 MPQ: 1
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IC NVSRAM 4M PARALLEL 32EDIP
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Tube | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 4Mb (512K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 22 MPQ: 1
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IC NVSRAM 1M PARALLEL 32EDIP
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Tube | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 40 MPQ: 1
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IC NVSRAM 1M PARALLEL 34PWRCAP
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Tube | 0°C ~ 70°C (TA) | 34-PowerCap? Module | 34-PowerCap Module | Surface Mount | 1Mb (128K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 100ns |
