- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Memory Interface:
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- Conditions sélectionnées:
Découvrez les produits 24
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
Toshiba Memory America,Inc. |
192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 4Gb (512M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 4Gb (512M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
338
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 1G PARALLEL 67VFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA | 67-VFBGA (6.5x8) | 1Gb (128M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
676
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 2G PARALLEL 67VFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA | 67-VFBGA (6.5x8) | 2Gb (256M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
96
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 1G PARALLEL 48TSOP I
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 1Gb (128M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
81
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 1G PARALLEL 48TSOP I
|
Tray | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 1Gb (128M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
96
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 2G PARALLEL 48TSOP I
|
Tray | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 2Gb (256M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
71
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 4Gb (512M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
89
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 4Gb (512M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
60
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 8G PARALLEL 48TSOP I
|
Tray | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 8Gb (1G x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 2G PARALLEL 48TSOP I
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 2Gb (256M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
12
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 67VFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA | 67-VFBGA (6.5x8) | 4Gb (512M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 338 MPQ: 1
|
IC FLASH 1G PARALLEL 67VFBGA
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-VFBGA | 67-VFBGA (6.5x8) | 1Gb (128M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 210 MPQ: 1
|
IC FLASH 1G PARALLEL 63TFBGA
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 63-VFBGA | 63-TFBGA (9x11) | 1Gb (128M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 338 MPQ: 1
|
IC FLASH 2G PARALLEL 67VFBGA
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 67-VFBGA | 67-VFBGA (6.5x8) | 2Gb (256M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 210 MPQ: 1
|
IC FLASH 4G PARALLEL 63TFBGA
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 63-VFBGA | 63-TFBGA (9x11) | 4Gb (512M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 338 MPQ: 1
|
IC FLASH 4G PARALLEL 67VFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 67-VFBGA | 67-VFBGA (6.5x8) | 4Gb (512M x 8) | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 210 MPQ: 1
|
1GB SLC NAND BGA 24NM I TEMP (EE
|
- | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 63-VFBGA | 63-TFBGA (9x11) | 1Gb (128M x 8) | - | - | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 210 MPQ: 1
|
2GB SLC BENAND 24NM BGA 9X11 (EE
|
- | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 63-VFBGA | 63-TFBGA (9x11) | 2Gb (256M x 8) | - | - | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 210 MPQ: 1
|
2GB SLC NAND BGA 24NM I TEMP (EE
|
- | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 63-VFBGA | 63-TFBGA (9x11) | 2Gb (256M x 8) | - | - | 25ns |