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Découvrez les produits 24
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Memory Size Access Time Memory Interface Write Cycle Time - Word, Page
TH58BVG2S3HTA00
Toshiba Memory America,Inc.
192
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 4Gb (512M x 8) 25ns Parallel 25ns
TH58BVG2S3HTAI0
Toshiba Memory America,Inc.
182
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 4Gb (512M x 8) 25ns Parallel 25ns
TC58BYG0S3HBAI6
Toshiba Memory America,Inc.
338
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 1G PARALLEL 67VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 67-VFBGA 67-VFBGA (6.5x8) 1Gb (128M x 8) 25ns Parallel 25ns
TC58BYG1S3HBAI6
Toshiba Memory America,Inc.
676
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 2G PARALLEL 67VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 67-VFBGA 67-VFBGA (6.5x8) 2Gb (256M x 8) 25ns Parallel 25ns
TC58BVG0S3HTAI0
Toshiba Memory America,Inc.
96
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 1G PARALLEL 48TSOP I
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 1Gb (128M x 8) 25ns Parallel 25ns
TC58BVG0S3HTA00
Toshiba Memory America,Inc.
81
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 1G PARALLEL 48TSOP I
Tray 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 1Gb (128M x 8) 25ns Parallel 25ns
TC58BVG1S3HTA00
Toshiba Memory America,Inc.
96
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 2G PARALLEL 48TSOP I
Tray 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 2Gb (256M x 8) 25ns Parallel 25ns
TC58BVG2S0HTA00
Toshiba Memory America,Inc.
71
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 4Gb (512M x 8) 25ns Parallel 25ns
TC58BVG2S0HTAI0
Toshiba Memory America,Inc.
89
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 4Gb (512M x 8) 25ns Parallel 25ns
TH58BVG3S0HTA00
Toshiba Memory America,Inc.
60
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 8G PARALLEL 48TSOP I
Tray 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 8Gb (1G x 8) 25ns Parallel 25ns
TC58BVG1S3HTAI0
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH 2G PARALLEL 48TSOP I
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 2Gb (256M x 8) 25ns Parallel 25ns
TC58BYG2S0HBAI6
Toshiba Memory America,Inc.
12
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 67VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 67-VFBGA 67-VFBGA (6.5x8) 4Gb (512M x 8) 25ns Parallel 25ns
TC58BVG0S3HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
IC FLASH 1G PARALLEL 67VFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 67-VFBGA 67-VFBGA (6.5x8) 1Gb (128M x 8) 25ns Parallel 25ns
TC58BVG0S3HBAI4
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 210  MPQ: 1
IC FLASH 1G PARALLEL 63TFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-VFBGA 63-TFBGA (9x11) 1Gb (128M x 8) 25ns Parallel 25ns
TC58BVG1S3HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
IC FLASH 2G PARALLEL 67VFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 67-VFBGA 67-VFBGA (6.5x8) 2Gb (256M x 8) 25ns Parallel 25ns
TC58BVG2S0HBAI4
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 210  MPQ: 1
IC FLASH 4G PARALLEL 63TFBGA
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-VFBGA 63-TFBGA (9x11) 4Gb (512M x 8) 25ns Parallel 25ns
TH58BYG2S3HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
IC FLASH 4G PARALLEL 67VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 67-VFBGA 67-VFBGA (6.5x8) 4Gb (512M x 8) 25ns Parallel 25ns
TC58BYG0S3HBAI4
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 210  MPQ: 1
1GB SLC NAND BGA 24NM I TEMP (EE
- 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA 63-TFBGA (9x11) 1Gb (128M x 8) - - 25ns
TC58BVG1S3HBAI4
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 210  MPQ: 1
2GB SLC BENAND 24NM BGA 9X11 (EE
- 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-VFBGA 63-TFBGA (9x11) 2Gb (256M x 8) - - 25ns
TC58BYG1S3HBAI4
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 210  MPQ: 1
2GB SLC NAND BGA 24NM I TEMP (EE
- 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA 63-TFBGA (9x11) 2Gb (256M x 8) - - 25ns