- Voltage - Supply:
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- Operating Temperature:
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- Memory Size:
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- Memory Type:
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- Technology:
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- Memory Format:
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- Conditions sélectionnées:
Découvrez les produits 16
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Memory Size | Memory Type | Technology | Memory Format | Access Time | Write Cycle Time - Word, Page | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Memory Size | Memory Type | Technology | Memory Format | Access Time | Write Cycle Time - Word, Page | ||
Renesas Electronics America |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | 55ns | 55ns | ||||
Renesas Electronics America |
986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | 55ns | 55ns | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | 70ns | 70ns | ||||
Microchip Technology |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 150ns | 10ms | ||||
Microchip Technology |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 90ns | 10ms | ||||
Microchip Technology |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 90ns | 10ms | ||||
Microchip Technology |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 90ns | 3ms | ||||
Microchip Technology |
1,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 64K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 64Kb (8K x 8) | Non-Volatile | EEPROM | EEPROM | 150ns | 10ms | ||||
Microchip Technology |
1,938
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 64K PARALLEL 28TSOP
|
2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | 64Kb (8K x 8) | Non-Volatile | EEPROM | EEPROM | 200ns | 10ms | ||||
Microchip Technology |
1,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 64K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 64Kb (8K x 8) | Non-Volatile | EEPROM | EEPROM | 90ns | 10ms | ||||
Microchip Technology |
1,679
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 200ns | 10ms | ||||
Microchip Technology |
1,351
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 150ns | 10ms | ||||
Microchip Technology |
1,250
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 150ns | 3ms | ||||
Microchip Technology |
1,860
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 120ns | 10ms | ||||
Microchip Technology |
1,974
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 200ns | 10ms | ||||
Microchip Technology |
1,995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 70ns | 10ms |