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Découvrez les produits 462
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Technology | Memory Format | Clock Frequency | Access Time | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Technology | Memory Format | Clock Frequency | Access Time | |
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Alliance Memory，Inc. |
6,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
- | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
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Micron Technology Inc. |
16,000
|
3 jours |
-
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MOQ: 2000 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
- | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
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|
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Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 54-VFBGA | 54-VFBGA (8x8) | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
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|
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Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 128M PARALLEL 54TSOP
|
- | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 128M PARALLEL 54TSOP
|
- | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 128M PARALLEL 86TSOP II
|
- | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | 128Mb (4M x 32) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
- | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA | 54-VFBGA (8x8) | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
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ISSI，Integrated Silicon Solution Inc |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 256K PARALLEL 28SOJ
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 28-BSOJ (0.300"，7.62mm Width) | 28-SOJ | 256Kb (32K x 8) | SRAM - Asynchronous | SRAM | - | 12ns | ||
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Alliance Memory，Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 128M PARALLEL 54TSOP
|
- | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 128M PARALLEL 54TSOP
|
- | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 64M PARALLEL 54TSOP
|
Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 64Mb (4M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 256M PARALLEL 54TSOP
|
- | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 256Mb (32M x 8) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 64M PARALLEL 54TSOP
|
Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 64Mb (4M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 64M PARALLEL 86TSOP II
|
Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | 64Mb (2M x 32) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 64M PARALLEL 86TSOP II
|
Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | 64Mb (2M x 32) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 128M PARALLEL 86TSOP II
|
- | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | 128Mb (4M x 32) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 128M PARALLEL 54VFBGA
|
- | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA | 54-VFBGA (8x8) | 128Mb (8M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 128M PARALLEL 86TSOP II
|
Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | 128Mb (4M x 32) | SDRAM | DRAM | 167MHz | 5.4ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 128M PARALLEL 90VFBGA
|
Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 90-VFBGA | 90-VFBGA (8x13) | 128Mb (4M x 32) | SDRAM | DRAM | 167MHz | 5.4ns |
