Clock Frequency:
Découvrez les produits 412
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Memory Size Memory Type Technology Memory Format Clock Frequency
S29GL256N10TFI010
Cypress Semiconductor Corp
14,068
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 256M PARALLEL 56TSOP
Tray GL-N 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 56-TFSOP (0.724",18.40mm Width) 56-TSOP Surface Mount 256Mb (32M x 8,16M x 16) Non-Volatile FLASH - NOR Flash -
M48Z08-100PC1
STMicroelectronics
1,115
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28PCDIP
Tube - 4.75 V ~ 5.5 V 0°C ~ 70°C (TA) 28-DIP Module (0.600",15.24mm) 28-PCDIP,CAPHAT? Through Hole 64Kb (8K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
M48Z18-100PC1
STMicroelectronics
584
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28PCDIP
Tube - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 28-DIP Module (0.600",15.24mm) 28-PCDIP,CAPHAT? Through Hole 64Kb (8K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1230AB-100+
Maxim Integrated
253
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
Tube - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 28-DIP Module (0.600",15.24mm) 28-EDIP Through Hole 256Kb (32K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1230Y-100+
Maxim Integrated
335
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
Tube - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 28-DIP Module (0.600",15.24mm) 28-EDIP Through Hole 256Kb (32K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1245Y-100+
Maxim Integrated
383
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 1M PARALLEL 32EDIP
Tube - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 32-DIP Module (0.600",15.24mm) 32-EDIP Through Hole 1Mb (128K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
S29GL128N10TFI010
Cypress Semiconductor Corp
12,725
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 128M PARALLEL 56TSOP
Tray GL-N 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 56-TFSOP (0.724",18.40mm Width) 56-TSOP Surface Mount 128Mb (16M x 8,8M x 16) Non-Volatile FLASH - NOR Flash -
DS1220AD-100IND+
Maxim Integrated
385
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 16K PARALLEL 24EDIP
Tube - 4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 24-DIP Module (0.600",15.24mm) 24-EDIP Through Hole 16Kb (2K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1345YP-100+
Maxim Integrated
136
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 1M PARALLEL 34PWRCAP
Tray - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 34-PowerCap? Module 34-PowerCap Module Surface Mount 1Mb (128K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1350WP-100IND+
Maxim Integrated
80
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 4M PARALLEL 34PWRCAP
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 34-PowerCap? Module 34-PowerCap Module Surface Mount 4Mb (512K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1250ABP-100+
Maxim Integrated
80
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 4M PARALLEL 34PWRCAP
Tray - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 34-PowerCap? Module 34-PowerCap Module Surface Mount 4Mb (512K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
S29GL512P10FAIR12
Cypress Semiconductor Corp
3,195
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 512M PARALLEL 64BGA
Tape & Reel (TR) GL-P 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64-LBGA 64-Fortified BGA (13x11) Surface Mount 512Mb (32M x 16) Non-Volatile FLASH - NOR Flash -
DS1220AB-100+
Maxim Integrated
74
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 16K PARALLEL 24EDIP
Tube - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 24-DIP Module (0.600",15.24mm) 24-EDIP Through Hole 16Kb (2K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1220AD-100+
Maxim Integrated
141
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 16K PARALLEL 24EDIP
Tube - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 24-DIP Module (0.600",15.24mm) 24-EDIP Through Hole 16Kb (2K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1230W-100+
Maxim Integrated
46
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
Tube - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 28-DIP Module (0.600",15.24mm) 28-EDIP Through Hole 256Kb (32K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1245AB-100+
Maxim Integrated
40
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 1M PARALLEL 32EDIP
Tube - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 32-DIP Module (0.600",15.24mm) 32-EDIP Through Hole 1Mb (128K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1249Y-100#
Maxim Integrated
6
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 2M PARALLEL 32EDIP
Tube - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 32-DIP Module (0.600",15.24mm) 32-EDIP Through Hole 2Mb (256K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1250Y-100+
Maxim Integrated
12
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 4M PARALLEL 32EDIP
Tube - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 32-DIP Module (0.600",15.24mm) 32-EDIP Through Hole 4Mb (512K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1250Y-100IND+
Maxim Integrated
11
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 4M PARALLEL 32EDIP
Tube - 4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 32-DIP Module (0.600",15.24mm) 32-EDIP Through Hole 4Mb (512K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -
DS1330WP-100+
Maxim Integrated
80
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 34PWRCAP
Tube - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 34-PowerCap? Module 34-PowerCap Module Surface Mount 256Kb (32K x 8) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM -