Découvrez les produits 566
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Mounting Type Memory Size Clock Frequency
MT53B128M32D1DS-062 AUT:A TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 2000  MPQ: 1
IC DRAM 4G 1600MHZ
Tape & Reel (TR) 1.1V -40°C ~ 125°C (TC) 200-WFBGA Surface Mount 4Gb (128M x 32) 1600MHz
MT53B128M32D1DS-062 AUT:A TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G 1600MHZ
Cut Tape (CT) 1.1V -40°C ~ 125°C (TC) 200-WFBGA Surface Mount 4Gb (128M x 32) 1600MHz
MT53B128M32D1DS-062 AUT:A TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G 1600MHZ
- 1.1V -40°C ~ 125°C (TC) 200-WFBGA Surface Mount 4Gb (128M x 32) 1600MHz
MT53B128M32D1DS-062 AIT:A
Micron Technology Inc.
1,310
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G 1600MHZ
- 1.1V -40°C ~ 85°C (TA) 200-WFBGA Surface Mount 4Gb (128M x 32) 1600MHz
MT53B128M32D1DS-062 AAT:A
Micron Technology Inc.
1,360
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G 1600MHZ
- 1.1V -40°C ~ 105°C (TA) 200-WFBGA Surface Mount 4Gb (128M x 32) 1600MHz
MT53B128M32D1DS-062 AUT:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 4G 1600MHZ
- 1.1V -40°C ~ 125°C (TC) 200-WFBGA Surface Mount 4Gb (128M x 32) 1600MHz
MT53B128M32D1DS-062 AAT:A TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G 1600MHZ
Tape & Reel (TR) 1.1V -40°C ~ 105°C (TA) 200-WFBGA Surface Mount 4Gb (128M x 32) 1600MHz
MT53B128M32D1DS-062 AIT:A TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G 1600MHZ
Tape & Reel (TR) 1.1V -40°C ~ 85°C (TA) 200-WFBGA Surface Mount 4Gb (128M x 32) 1600MHz
MT53B256M32D1NP-062 WT:C TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 8G 1600MHZ 200FBGA
Tape & Reel (TR) 1.1V -30°C ~ 85°C (TC) - - 8Gb (256M x 32) 1600MHz
MT53B256M32D1NP-062 WT:C TR
Micron Technology Inc.
809
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 8G 1600MHZ 200FBGA
Cut Tape (CT) 1.1V -30°C ~ 85°C (TC) - - 8Gb (256M x 32) 1600MHz
MT53B256M32D1NP-062 WT:C TR
Micron Technology Inc.
809
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 8G 1600MHZ 200FBGA
- 1.1V -30°C ~ 85°C (TC) - - 8Gb (256M x 32) 1600MHz
MT53B256M32D1NP-062 AIT:C TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 8G 1600MHZ 200FBGA
Tape & Reel (TR) 1.1V -40°C ~ 95°C (TC) - - 8Gb (256M x 32) 1600MHz
MT53B256M32D1NP-062 AIT:C TR
Micron Technology Inc.
920
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 8G 1600MHZ 200FBGA
Cut Tape (CT) 1.1V -40°C ~ 95°C (TC) - - 8Gb (256M x 32) 1600MHz
MT53B256M32D1NP-062 AIT:C TR
Micron Technology Inc.
920
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 8G 1600MHZ 200FBGA
- 1.1V -40°C ~ 95°C (TC) - - 8Gb (256M x 32) 1600MHz
MT53B512M32D2NP-062 WT:C TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16G 1600MHZ FBGA
Tape & Reel (TR) 1.1V -30°C ~ 85°C (TC) - - 16Gb (512M x 32) 1600MHz
MT53B512M32D2NP-062 WT:C TR
Micron Technology Inc.
865
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16G 1600MHZ FBGA
Cut Tape (CT) 1.1V -30°C ~ 85°C (TC) - - 16Gb (512M x 32) 1600MHz
MT53B512M32D2NP-062 WT:C TR
Micron Technology Inc.
865
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16G 1600MHZ FBGA
- 1.1V -30°C ~ 85°C (TC) - - 16Gb (512M x 32) 1600MHz
MT53B384M16D1Z0APWC1
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC SDRAM 6GBIT DIE
- 1.1V 0°C ~ 85°C (TC) - - 6Gb (384M x 16) -
MT53B384M16D1Z0AQWC1
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC SDRAM 6GBIT DIE
- 1.1V 0°C ~ 85°C (TC) - - 6Gb (384M x 16) -
MT53B384M64D4NZ-053 WT ES:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 24G 1866MHZ FBGA
- 1.1V -30°C ~ 85°C (TC) - - 24Gb (384M x 64) 1866MHz