Number of Circuits:
Number of Inputs:
Current - Quiescent (Max):
Découvrez les produits 725
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Number of Circuits Mounting Type Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
TC7WH02FU,LJ(CT
Toshiba Semiconductor and Storage
5,975
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NOR 2CH 2-INP 8SSOP
Cut Tape (CT) TC7WH 2 V ~ 5.5 V -40°C ~ 85°C 8-TSSOP,8-MSOP (0.118",3.00mm Width) 8-SSOP 2 Surface Mount - 2 2μA NOR Gate - - 8mA,8mA 7.5ns @ 5V,50pF
TC7WH02FU,LJ(CT
Toshiba Semiconductor and Storage
5,975
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NOR 2CH 2-INP 8SSOP
- TC7WH 2 V ~ 5.5 V -40°C ~ 85°C 8-TSSOP,8-MSOP (0.118",3.00mm Width) 8-SSOP 2 Surface Mount - 2 2μA NOR Gate - - 8mA,8mA 7.5ns @ 5V,50pF
7UL1G32FS,LF
Toshiba Semiconductor and Storage
10,000
3 jours
-
MOQ: 10000  MPQ: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Tape & Reel (TR) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) SOT-953 fSV 1 Surface Mount - 2 1μA OR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G32FS,LF
Toshiba Semiconductor and Storage
19,990
3 jours
-
MOQ: 1  MPQ: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Cut Tape (CT) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) SOT-953 fSV 1 Surface Mount - 2 1μA OR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G32FS,LF
Toshiba Semiconductor and Storage
19,990
3 jours
-
MOQ: 1  MPQ: 1
L-MOS LVP SERIES SINGLE 2-INPUT
- 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) SOT-953 fSV 1 Surface Mount - 2 1μA OR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G02FS,LF
Toshiba Semiconductor and Storage
10,000
3 jours
-
MOQ: 10000  MPQ: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Tape & Reel (TR) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) SOT-953 fSV 1 Surface Mount - 2 1μA NOR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G02FS,LF
Toshiba Semiconductor and Storage
17,750
3 jours
-
MOQ: 1  MPQ: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Cut Tape (CT) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) SOT-953 fSV 1 Surface Mount - 2 1μA NOR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G02FS,LF
Toshiba Semiconductor and Storage
17,750
3 jours
-
MOQ: 1  MPQ: 1
L-MOS LVP SERIES SINGLE 2-INPUT
- 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) SOT-953 fSV 1 Surface Mount - 2 1μA NOR Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G08FS,LF
Toshiba Semiconductor and Storage
10,000
3 jours
-
MOQ: 10000  MPQ: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Tape & Reel (TR) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) SOT-953 fSV 1 Surface Mount - 2 1μA AND Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G08FS,LF
Toshiba Semiconductor and Storage
19,978
3 jours
-
MOQ: 1  MPQ: 1
L-MOS LVP SERIES SINGLE 2-INPUT
Cut Tape (CT) 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) SOT-953 fSV 1 Surface Mount - 2 1μA AND Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
7UL1G08FS,LF
Toshiba Semiconductor and Storage
19,978
3 jours
-
MOQ: 1  MPQ: 1
L-MOS LVP SERIES SINGLE 2-INPUT
- 7UL 0.9 V ~ 3.6 V -40°C ~ 85°C (TA) SOT-953 fSV 1 Surface Mount - 2 1μA AND Gate 0.1 V ~ 0.4 V 0.75 V ~ 2.48 V 8mA,8mA 4.4ns @ 3.6V,30pF
74HC03D
Toshiba Semiconductor and Storage
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE NAND 4CH 2-INP 14SOIC
Tape & Reel (TR) 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount Open Drain 2 1μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V -,5.2mA 13ns @ 6V,50pF
74HC03D
Toshiba Semiconductor and Storage
3,608
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 4CH 2-INP 14SOIC
Cut Tape (CT) 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount Open Drain 2 1μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V -,5.2mA 13ns @ 6V,50pF
74HC03D
Toshiba Semiconductor and Storage
3,608
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 4CH 2-INP 14SOIC
- 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount Open Drain 2 1μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V -,5.2mA 13ns @ 6V,50pF
74HC05D
Toshiba Semiconductor and Storage
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC INVERTER 6CH 6-INP 14SOIC
Tape & Reel (TR) 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 6 Surface Mount Open Drain 6 1μA Inverter 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V -,5.2mA 15ns @ 6V,50pF
74HC05D
Toshiba Semiconductor and Storage
4,867
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 6CH 6-INP 14SOIC
Cut Tape (CT) 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 6 Surface Mount Open Drain 6 1μA Inverter 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V -,5.2mA 15ns @ 6V,50pF
74HC05D
Toshiba Semiconductor and Storage
4,867
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 6CH 6-INP 14SOIC
- 74HC 2 V ~ 6 V -40°C ~ 125°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 6 Surface Mount Open Drain 6 1μA Inverter 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V -,5.2mA 15ns @ 6V,50pF
74HCT00D
Toshiba Semiconductor and Storage
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE NAND 4CH 2-INP 14SOIC
Tape & Reel (TR) 74HCT 4.5 V ~ 5.5 V -40°C ~ 85°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount - 2 1μA NAND Gate 0.8V 2V 4mA,4mA 17ns @ 5.5V,50pF
74HCT00D
Toshiba Semiconductor and Storage
2,567
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 4CH 2-INP 14SOIC
Cut Tape (CT) 74HCT 4.5 V ~ 5.5 V -40°C ~ 85°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount - 2 1μA NAND Gate 0.8V 2V 4mA,4mA 17ns @ 5.5V,50pF
74HCT00D
Toshiba Semiconductor and Storage
2,567
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 4CH 2-INP 14SOIC
- 74HCT 4.5 V ~ 5.5 V -40°C ~ 85°C 14-SOIC (0.154",3.90mm Width) 14-SOIC 4 Surface Mount - 2 1μA NAND Gate 0.8V 2V 4mA,4mA 17ns @ 5.5V,50pF