- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Features:
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- Current - Quiescent (Max):
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- Logic Level - Low:
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- Logic Level - High:
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- Current - Output High, Low:
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- Max Propagation Delay @ V, Max CL:
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- Conditions sélectionnées:
Découvrez les produits 516
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Features | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Features | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE NOR 2CH 4-INP 14DIP
|
Tube | 74HC | 2 V ~ 6 V | -40°C ~ 125°C | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | - | 2μA | NOR Gate | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA,5.2mA | 17ns @ 6V,50pF | ||||
NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
Tube | 74ABT | 4.5 V ~ 5.5 V | -40°C ~ 85°C | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | - | 50μA | NAND Gate | 0.8V | 2V | 15mA,20mA | 3.9ns @ 5V,50pF | ||||
NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
Tube | 74HCT | 4.5 V ~ 5.5 V | -40°C ~ 125°C | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | - | 2μA | NAND Gate | 0.8V | 2V | 4mA,4mA | 28ns @ 4.5V,50pF | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NOR 2CH 4-INP 14DIP
|
Tube | 74HCT | 4.5 V ~ 5.5 V | -40°C ~ 125°C | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | - | 2μA | NOR Gate | 0.8V | 2V | 4mA,4mA | 22ns @ 4.5V,50pF | ||||
NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE AND 2CH 4-INP 14DIP
|
Tube | 74HC | 2 V ~ 6 V | -40°C ~ 125°C | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | - | 2μA | AND Gate | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA,5.2mA | 19ns @ 6V,50pF | ||||
NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE AND 2CH 4-INP 14DIP
|
Tube | 4000B | 3 V ~ 15 V | -40°C ~ 125°C | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | - | 4μA | AND Gate | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3.4mA,3.4mA | 45ns @ 15V,50pF | ||||
NXP USA Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE OR 2CH 4-INP 14SO
|
Tape & Reel (TR) | 4000B | 3 V ~ 15 V | -40°C ~ 85°C | 14-SOIC (0.154",3.90mm Width) | 14-SO | Surface Mount | - | 4μA | OR Gate | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3mA,3mA | 55ns @ 15V,50pF | ||||
NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE OR 2CH 4-INP 14SO
|
Cut Tape (CT) | 4000B | 3 V ~ 15 V | -40°C ~ 85°C | 14-SOIC (0.154",3.90mm Width) | 14-SO | Surface Mount | - | 4μA | OR Gate | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3mA,3mA | 55ns @ 15V,50pF | ||||
NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE OR 2CH 4-INP 14SO
|
- | 4000B | 3 V ~ 15 V | -40°C ~ 85°C | 14-SOIC (0.154",3.90mm Width) | 14-SO | Surface Mount | - | 4μA | OR Gate | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3mA,3mA | 55ns @ 15V,50pF | ||||
NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1140 MPQ: 1
|
IC GATE OR 2CH 4-INP 14SO
|
Tube | 4000B | 3 V ~ 15 V | -40°C ~ 85°C | 14-SOIC (0.154",3.90mm Width) | 14-SO | Surface Mount | - | 4μA | OR Gate | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3mA,3mA | 55ns @ 15V,50pF | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1150 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
Tube | 74LS | 4.75 V ~ 5.25 V | 0°C ~ 70°C | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | - | - | NAND Gate | 0.8V | 2V | 400μA,8mA | 15ns @ 5V,50pF | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 700 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
Tube | 74S | 4.75 V ~ 5.25 V | 0°C ~ 70°C | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | - | - | NAND Gate | 0.8V | 2V | 3mA,60mA | 9ns @ 5V,150pF | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 720 MPQ: 1
|
IC INVERTER 2CH 4-INP 20DIP
|
Tube | 74LS | 4.75 V ~ 5.25 V | 0°C ~ 70°C | 20-DIP (0.300",7.62mm) | 20-PDIP | Through Hole | 3-State | - | Inverter | 0.8V | 2V | 15mA,24mA | 22ns @ 5V,150pF | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 450 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
Tube | 74S | 4.75 V ~ 5.25 V | 0°C ~ 70°C | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | - | - | NAND Gate | 0.8V | 2V | 3mA,60mA | 9ns @ 5V,150pF | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 775 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
Tube | 74S | 4.75 V ~ 5.25 V | 0°C ~ 70°C | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | - | - | NAND Gate | 0.8V | 2V | 1mA,20mA | 8ns @ 5V,50pF | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 216 MPQ: 1
|
IC INVERTER 2CH 4-INP 20DIP
|
Tube | 74S | 4.75 V ~ 5.25 V | 0°C ~ 70°C | 20-DIP (0.300",7.62mm) | 20-PDIP | Through Hole | 3-State | - | Inverter | 0.8V | 2V | 15mA,64mA | 10ns @ 5V,150pF | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
Tube | 74AC | 2 V ~ 6 V | -40°C ~ 85°C | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | - | 2μA | NAND Gate | 0.9 V ~ 1.65 V | 2.1 V ~ 3.85 V | 24mA,24mA | 7ns @ 5V,50pF | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
Tube | 74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | - | - | NAND Gate | 0.8V | 2V | 1mA,20mA | 5ns @ 5V,50pF | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
Tube | 74ALS | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | - | - | NAND Gate | 0.8V | 2V | 400μA,8mA | 11ns @ 5V,50pF | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE AND 2CH 4-INP 14DIP
|
Tube | 74AS | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | - | - | AND Gate | 0.8V | 2V | 2mA,20mA | 6ns @ 5V,50pF |