Découvrez les produits 36
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Number of Circuits Features Number of Inputs Logic Type Current - Output High, Low Max Propagation Delay @ V, Max CL
74AUP1G02FW4-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC GATE NOR 1CH 2-INP DFN1010-6
Tape & Reel (TR) -40°C ~ 125°C 1 - 2 NOR Gate 4mA,4mA 6.4ns @ 3.3V,30pF
74AUP1G02FW4-7
Diodes Incorporated
6,853
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NOR 1CH 2-INP DFN1010-6
Cut Tape (CT) -40°C ~ 125°C 1 - 2 NOR Gate 4mA,4mA 6.4ns @ 3.3V,30pF
74AUP1G02FW4-7
Diodes Incorporated
6,853
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NOR 1CH 2-INP DFN1010-6
- -40°C ~ 125°C 1 - 2 NOR Gate 4mA,4mA 6.4ns @ 3.3V,30pF
74AUP1G06FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC INVERTER 1CH 1-INP DFN1010-6
Tape & Reel (TR) -40°C ~ 125°C (TA) 1 Open Drain 1 Inverter -,4mA 10.5ns @ 3.3V,30pF
74AUP1G06FW4-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC INVERTER 1CH 1-INP DFN1010-6
Tape & Reel (TR) -40°C ~ 125°C 1 Open Drain 1 Inverter -,4mA 10.5ns @ 3.3V,30pF
74AUP1G06FW4-7
Diodes Incorporated
4,560
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP DFN1010-6
Cut Tape (CT) -40°C ~ 125°C 1 Open Drain 1 Inverter -,4mA 10.5ns @ 3.3V,30pF
74AUP1G06FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP DFN1010-6
- -40°C ~ 125°C 1 Open Drain 1 Inverter -,4mA 10.5ns @ 3.3V,30pF
74AUP1G00FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1010-6
Tape & Reel (TR) -40°C ~ 125°C (TA) 1 - 2 NAND Gate 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G00FW4-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1010-6
Tape & Reel (TR) -40°C ~ 125°C 1 - 2 NAND Gate 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G00FW4-7
Diodes Incorporated
4,955
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1010-6
Cut Tape (CT) -40°C ~ 125°C 1 - 2 NAND Gate 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G00FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1010-6
- -40°C ~ 125°C 1 - 2 NAND Gate 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G08FW4-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC GATE AND 1CH 2-INP DFN1010-6
Tape & Reel (TR) -40°C ~ 125°C 1 - 2 AND Gate 4mA,4mA 6.2ns @ 3.3V,30pF
74AUP1G08FW4-7
Diodes Incorporated
2,630
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP DFN1010-6
Cut Tape (CT) -40°C ~ 125°C 1 - 2 AND Gate 4mA,4mA 6.2ns @ 3.3V,30pF
74AUP1G08FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP DFN1010-6
- -40°C ~ 125°C 1 - 2 AND Gate 4mA,4mA 6.2ns @ 3.3V,30pF
74AUP1G86FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE XOR 1CH 2-INP DFN1010-6
Tape & Reel (TR) -40°C ~ 125°C (TA) 1 - 2 XOR (Exclusive OR) 4mA,4mA 7.1ns @ 3.3V,30pF
74AUP1G86FW4-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC GATE XOR 1CH 2-INP DFN1010-6
Tape & Reel (TR) -40°C ~ 125°C 1 - 2 XOR (Exclusive OR) 4mA,4mA 7.1ns @ 3.3V,30pF
74AUP1G86FW4-7
Diodes Incorporated
3,417
3 jours
-
MOQ: 1  MPQ: 1
IC GATE XOR 1CH 2-INP DFN1010-6
Cut Tape (CT) -40°C ~ 125°C 1 - 2 XOR (Exclusive OR) 4mA,4mA 7.1ns @ 3.3V,30pF
74AUP1G86FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE XOR 1CH 2-INP DFN1010-6
- -40°C ~ 125°C 1 - 2 XOR (Exclusive OR) 4mA,4mA 7.1ns @ 3.3V,30pF
74AUP1G32FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE OR 1CH 2-INP DFN1010-6
Tape & Reel (TR) -40°C ~ 125°C (TA) 1 - 2 OR Gate 4mA,4mA 6.4ns @ 3.3V,30pF
74AUP1G32FW4-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC GATE OR 1CH 2-INP DFN1010-6
Tape & Reel (TR) -40°C ~ 125°C 1 - 2 OR Gate 4mA,4mA 6.4ns @ 3.3V,30pF