Number of Circuits:
Number of Inputs:
Current - Quiescent (Max):
Logic Level - High:
Découvrez les produits 901
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Number of Circuits Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
74AUP1G04FZ4-7
Diodes Incorporated
4,759
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP DFN1410-6
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1410-6 1 - 1 500nA Inverter 1.6 V ~ 2 V 4mA,4mA 5.4ns @ 3.3V,30pF
74AUP1G04FZ4-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP DFN1410-6
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1410-6 1 - 1 500nA Inverter 1.6 V ~ 2 V 4mA,4mA 5.4ns @ 3.3V,30pF
74AUP1G00FZ4-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1410-6
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C (TA) 6-XFDFN X2-DFN1410-6 1 - 2 500nA NAND Gate 1.6 V ~ 2 V 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G00FZ4-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1410-6
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1410-6 1 - 2 500nA NAND Gate 1.6 V ~ 2 V 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G00FZ4-7
Diodes Incorporated
4,000
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1410-6
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1410-6 1 - 2 500nA NAND Gate 1.6 V ~ 2 V 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G00FZ4-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1410-6
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1410-6 1 - 2 500nA NAND Gate 1.6 V ~ 2 V 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G00FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1010-6
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C (TA) 6-XFDFN X2-DFN1010-6 1 - 2 500nA NAND Gate 1.6 V ~ 2 V 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G00FW4-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1010-6
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1010-6 1 - 2 500nA NAND Gate 1.6 V ~ 2 V 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G00FW4-7
Diodes Incorporated
4,955
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1010-6
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1010-6 1 - 2 500nA NAND Gate 1.6 V ~ 2 V 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G00FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP DFN1010-6
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1010-6 1 - 2 500nA NAND Gate 1.6 V ~ 2 V 4mA,4mA 6.5ns @ 3.3V,30pF
74AUP1G08FW4-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC GATE AND 1CH 2-INP DFN1010-6
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1010-6 1 - 2 500nA AND Gate 1.6 V ~ 2 V 4mA,4mA 6.2ns @ 3.3V,30pF
74AUP1G08FW4-7
Diodes Incorporated
2,630
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP DFN1010-6
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1010-6 1 - 2 500nA AND Gate 1.6 V ~ 2 V 4mA,4mA 6.2ns @ 3.3V,30pF
74AUP1G08FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP DFN1010-6
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1010-6 1 - 2 500nA AND Gate 1.6 V ~ 2 V 4mA,4mA 6.2ns @ 3.3V,30pF
74AUP1G06SE-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC INVERTER 1CH 1-INP SOT353
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C (TA) 5-TSSOP,SC-70-5,SOT-353 SOT-353 1 Open Drain 1 500nA Inverter 1.6 V ~ 2 V -,4mA 10.5ns @ 3.3V,30pF
74AUP1G06SE-7
Diodes Incorporated
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC INVERTER 1CH 1-INP SOT353
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 5-TSSOP,SC-70-5,SOT-353 SOT-353 1 Open Drain 1 500nA Inverter 1.6 V ~ 2 V -,4mA 10.5ns @ 3.3V,30pF
74AUP1G06SE-7
Diodes Incorporated
2,521
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP SOT353
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 5-TSSOP,SC-70-5,SOT-353 SOT-353 1 Open Drain 1 500nA Inverter 1.6 V ~ 2 V -,4mA 10.5ns @ 3.3V,30pF
74AUP1G06SE-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP SOT353
- 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 5-TSSOP,SC-70-5,SOT-353 SOT-353 1 Open Drain 1 500nA Inverter 1.6 V ~ 2 V -,4mA 10.5ns @ 3.3V,30pF
74AUP1G86FW4-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE XOR 1CH 2-INP DFN1010-6
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C (TA) 6-XFDFN X2-DFN1010-6 1 - 2 500nA XOR (Exclusive OR) 1.6 V ~ 2 V 4mA,4mA 7.1ns @ 3.3V,30pF
74AUP1G86FW4-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC GATE XOR 1CH 2-INP DFN1010-6
Tape & Reel (TR) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1010-6 1 - 2 500nA XOR (Exclusive OR) 1.6 V ~ 2 V 4mA,4mA 7.1ns @ 3.3V,30pF
74AUP1G86FW4-7
Diodes Incorporated
3,417
3 jours
-
MOQ: 1  MPQ: 1
IC GATE XOR 1CH 2-INP DFN1010-6
Cut Tape (CT) 74AUP 0.8 V ~ 3.6 V -40°C ~ 125°C 6-XFDFN X2-DFN1010-6 1 - 2 500nA XOR (Exclusive OR) 1.6 V ~ 2 V 4mA,4mA 7.1ns @ 3.3V,30pF