Découvrez les produits 23
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Number of Circuits Number of Inputs Current - Quiescent (Max) Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
BU4001B
ROHM Semiconductor
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
4000B 3 V ~ 16 V -40°C ~ 85°C 4 2 4μA 1.5 V ~ 4 V 3.5 V ~ 11 V 1.2mA,3mA 40ns @ 15V,50pF
HEF4002BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 2CH 4-INP 14DIP
4000B 3 V ~ 15 V -40°C ~ 85°C 2 4 4μA 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 40ns @ 15V,50pF
M74HC02B1R
STMicroelectronics
Enquête
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MOQ: 5000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
74HC 2 V ~ 6 V -55°C ~ 125°C 4 2 1μA 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 13ns @ 6V,50pF
74HCT27N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 3CH 3-INP 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 3 3 2μA 0.8V 2V 4mA,4mA 21ns @ 4.5V,50pF
74HC4002N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 2CH 4-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 2 4 2μA 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 17ns @ 6V,50pF
74HCT02N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 4 2 2μA 0.8V 2V 4mA,4mA 19ns @ 4.5V,50pF
74HC02N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 4 2 2μA 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 15ns @ 6V,50pF
N74F27N,602
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 3CH 3-INP 14DIP
74F 4.5 V ~ 5.5 V 0°C ~ 70°C 3 3 - 0.8V 2V 1mA,20mA 5ns @ 5V,50pF
N74F02N,602
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
74F 4.5 V ~ 5.5 V 0°C ~ 70°C 4 2 - 0.8V 2V 1mA,20mA 5.5ns @ 5V,50pF
74HCT4002N,112
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 2CH 4-INP 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 2 4 2μA 0.8V 2V 4mA,4mA 22ns @ 4.5V,50pF
74HC27N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 3CH 3-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 3 3 2μA 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 15ns @ 6V,50pF
74ABT02N,112
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
74ABT 4.5 V ~ 5.5 V -40°C ~ 85°C 4 2 50μA 0.8V 2V 15mA,20mA 3.7ns @ 5V,50pF
HEF4025BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 3CH 3-INP 14DIP
4000B 3 V ~ 15 V -40°C ~ 85°C 3 3 4μA 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 40ns @ 15V,50pF
HEF4001BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
4000B 3 V ~ 15 V -40°C ~ 125°C 4 2 1μA 1.5 V ~ 4 V 3.5 V ~ 11 V 3.4mA,3.4mA 40ns @ 15V,50pF
TC74ACT02P
Toshiba Semiconductor and Storage
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
TC74ACT 4.5 V ~ 5.5 V -40°C ~ 85°C 4 2 4μA 0.8V 2V 24mA,24mA 8.3ns @ 5V,50pF
74AC02B
STMicroelectronics
Enquête
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MOQ: 7000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
74AC 2 V ~ 6 V -55°C ~ 125°C 4 2 2μA 0.9 V ~ 1.65 V 2.1 V ~ 3.85 V 24mA,24mA 8ns @ 5V,50pF
74ACT02B
STMicroelectronics
Enquête
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MOQ: 7000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
74ACT 4.5 V ~ 5.5 V -55°C ~ 125°C 4 2 2μA 0.8V 2V 24mA,24mA 8ns @ 5V,50pF
HCF4001BEY
STMicroelectronics
Enquête
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MOQ: 5000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
4000B 3 V ~ 20 V -55°C ~ 125°C 4 2 5μA 1.5 V ~ 4 V 3.5 V ~ 11 V 6.8mA,6.8mA 80ns @ 15V,50pF
TC74HC02APF
Toshiba Semiconductor and Storage
Enquête
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MOQ: 0  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
TC74HC 2 V ~ 6 V -40°C ~ 85°C 4 2 1μA 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 13ns @ 6V,50pF
HCF4025BEY
STMicroelectronics
Enquête
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MOQ: 3000  MPQ: 1
IC GATE NOR 3CH 3-INP 14DIP
4000 3 V ~ 20 V -55°C ~ 125°C 3 3 5μA 1.5 V ~ 4 V 3.5 V ~ 11 V 6.8mA,6.8mA 80ns @ 15V,50pF