- Voltage - Supply：
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- Operating Temperature：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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- Max Propagation Delay @ V, Max CL：
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- Conditions sélectionnées:
Découvrez les produits 45
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Number of Circuits | Features | Number of Inputs | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Number of Circuits | Features | Number of Inputs | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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STMicroelectronics |
4,019
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 3CH 3-INP 14DIP
|
74HC | 2 V ~ 6 V | -55°C ~ 125°C | 3 | - | 3 | 1μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 13ns @ 6V，50pF | ||
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|
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STMicroelectronics |
2,837
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
74HC | 2 V ~ 6 V | -55°C ~ 125°C | 4 | Open Drain | 2 | 1μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | -，5.2mA | 10ns @ 6V，50pF | ||
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ROHM Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
4000B | 3 V ~ 16 V | -40°C ~ 85°C | 4 | - | 2 | 4μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 1.2mA，3mA | 40ns @ 15V，50pF | ||
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ROHM Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND SCHMITT 4CH 14DIP
|
4000B | 3 V ~ 16 V | -40°C ~ 85°C | 4 | Schmitt Trigger | 2 | 4μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3mA，3mA | 40ns @ 15V，50pF | ||
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|
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Toshiba Semiconductor and Storage |
31
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
TC74AC | 2 V ~ 5.5 V | -40°C ~ 85°C | 4 | - | 2 | 4μA | 0.5 V ~ 1.65 V | 1.5 V ~ 3.85 V | 24mA，24mA | 7ns @ 5V，50pF | ||
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NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 2 | - | 4 | - | 0.8V | 2V | 1mA，20mA | 5ns @ 5V，50pF | ||
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NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
4000B | 3 V ~ 15 V | -40°C ~ 125°C | 4 | - | 2 | 1μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3.4mA，3.4mA | 35ns @ 15V，50pF | ||
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|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 3CH 3-INP 14DIP
|
74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 3 | - | 3 | - | 0.8V | 2V | 1mA，20mA | 5ns @ 5V，50pF | ||
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NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 4 | Open Collector | 2 | - | 0.8V | 2V | -，64mA | 12.5ns @ 5V，50pF | ||
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|
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NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
74HC | 2 V ~ 6 V | -40°C ~ 125°C | 2 | - | 4 | 2μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 15ns @ 6V，50pF | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 3CH 3-INP 14DIP
|
74HC | 2 V ~ 6 V | -40°C ~ 125°C | 3 | - | 3 | 2μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 16ns @ 6V，50pF | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
74HC | 2 V ~ 6 V | -40°C ~ 125°C | 4 | - | 2 | 40μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 7ns @ 6V，50pF | ||
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|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 1CH 8-INP 14DIP
|
4000B | 3 V ~ 15 V | -40°C ~ 85°C | 1 | - | 8 | 4μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3mA，3mA | 65ns @ 15V，50pF | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 1CH 8-INP 14DIP
|
74HCT | 4.5 V ~ 5.5 V | -40°C ~ 125°C | 1 | - | 8 | 2μA | 0.8V | 2V | 4mA，4mA | 28ns @ 4.5V，50pF | ||
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|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
74HC | 2 V ~ 6 V | -40°C ~ 125°C | 4 | Open Drain | 2 | 2μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | -，5.2mA | 16ns @ 6V，50pF | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
74ABT | 4.5 V ~ 5.5 V | -40°C ~ 85°C | 4 | - | 2 | 50μA | 0.8V | 2V | 15mA，20mA | 3.6ns @ 5V，50pF | ||
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|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
74HCT | 4.5 V ~ 5.5 V | -55°C ~ 125°C | 4 | - | 2 | 1μA | 0.8V | 2V | 4mA，4mA | 19ns @ 4.5V，50pF | ||
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|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
74HC | 2 V ~ 6 V | -55°C ~ 125°C | 2 | - | 4 | 1μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 14ns @ 6V，50pF | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
74HCT | 4.5 V ~ 5.5 V | -40°C ~ 125°C | 4 | Open Drain | 2 | 2μA | 0.8V | 2V | -，4mA | 24ns @ 4.5V，50pF | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 2CH 4-INP 14DIP
|
74ABT | 4.5 V ~ 5.5 V | -40°C ~ 85°C | 2 | - | 4 | 50μA | 0.8V | 2V | 15mA，20mA | 3.9ns @ 5V，50pF |
