Découvrez les produits 41
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Features Number of Inputs Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
TC7SZ08FE,LJ(CT
Toshiba Semiconductor and Storage
8,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE AND 1CH 2-INP ESV
Tape & Reel (TR) TC7SZ 1.65 V ~ 5.5 V - 2 AND Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ08FE,LJ(CT
Toshiba Semiconductor and Storage
8,286
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP ESV
Cut Tape (CT) TC7SZ 1.65 V ~ 5.5 V - 2 AND Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ08FE,LJ(CT
Toshiba Semiconductor and Storage
8,286
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP ESV
- TC7SZ 1.65 V ~ 5.5 V - 2 AND Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ02FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE NOR 1CH 2-INP ESV
Tape & Reel (TR) TC7SZ 1.65 V ~ 5.5 V - 2 NOR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02FE,LJ(CT
Toshiba Semiconductor and Storage
4,416
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NOR 1CH 2-INP ESV
Cut Tape (CT) TC7SZ 1.65 V ~ 5.5 V - 2 NOR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02FE,LJ(CT
Toshiba Semiconductor and Storage
4,416
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NOR 1CH 2-INP ESV
- TC7SZ 1.65 V ~ 5.5 V - 2 NOR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE NAND 1CH 2-INP ESV
Tape & Reel (TR) TC7SZ 1.65 V ~ 5.5 V - 2 NAND Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ00FE,LJ(CT
Toshiba Semiconductor and Storage
7,321
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP ESV
Cut Tape (CT) TC7SZ 1.65 V ~ 5.5 V - 2 NAND Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ00FE,LJ(CT
Toshiba Semiconductor and Storage
7,321
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP ESV
- TC7SZ 1.65 V ~ 5.5 V - 2 NAND Gate - - 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ86FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE XOR 1CH 2-INP ESV
Tape & Reel (TR) TC7SZ 1.65 V ~ 5.5 V - 2 XOR (Exclusive OR) - - 32mA,32mA 5.4ns @ 5V,50pF
TC7SZ86FE,LJ(CT
Toshiba Semiconductor and Storage
5,252
3 jours
-
MOQ: 1  MPQ: 1
IC GATE XOR 1CH 2-INP ESV
Cut Tape (CT) TC7SZ 1.65 V ~ 5.5 V - 2 XOR (Exclusive OR) - - 32mA,32mA 5.4ns @ 5V,50pF
TC7SZ86FE,LJ(CT
Toshiba Semiconductor and Storage
5,252
3 jours
-
MOQ: 1  MPQ: 1
IC GATE XOR 1CH 2-INP ESV
- TC7SZ 1.65 V ~ 5.5 V - 2 XOR (Exclusive OR) - - 32mA,32mA 5.4ns @ 5V,50pF
TC7SZ05FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC INVERTER OD 1CH 1-INP ESV
Tape & Reel (TR) TC7SZ 1.65 V ~ 5.5 V Open Drain 1 Inverter - - -,32mA 3.5ns @ 5V,50pF
TC7SZ05FE,LJ(CT
Toshiba Semiconductor and Storage
5,748
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER OD 1CH 1-INP ESV
Cut Tape (CT) TC7SZ 1.65 V ~ 5.5 V Open Drain 1 Inverter - - -,32mA 3.5ns @ 5V,50pF
TC7SZ05FE,LJ(CT
Toshiba Semiconductor and Storage
5,748
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER OD 1CH 1-INP ESV
- TC7SZ 1.65 V ~ 5.5 V Open Drain 1 Inverter - - -,32mA 3.5ns @ 5V,50pF
TC7SZ32FE,LJ(CT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 4000  MPQ: 1
IC GATE OR 1CH 2-INP ESV
Tape & Reel (TR) TC7SZ 1.65 V ~ 5.5 V - 2 OR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ32FE,LJ(CT
Toshiba Semiconductor and Storage
3,765
3 jours
-
MOQ: 1  MPQ: 1
IC GATE OR 1CH 2-INP ESV
Cut Tape (CT) TC7SZ 1.65 V ~ 5.5 V - 2 OR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ32FE,LJ(CT
Toshiba Semiconductor and Storage
3,765
3 jours
-
MOQ: 1  MPQ: 1
IC GATE OR 1CH 2-INP ESV
- TC7SZ 1.65 V ~ 5.5 V - 2 OR Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ04FE,LJ(CT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 4000  MPQ: 1
IC INVERTER 1CH 1-INP ESV
Tape & Reel (TR) TC7SZ 1.65 V ~ 5.5 V - 1 Inverter - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ04FE,LJ(CT
Toshiba Semiconductor and Storage
1,212
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP ESV
Cut Tape (CT) TC7SZ 1.65 V ~ 5.5 V - 1 Inverter - - 32mA,32mA 4.3ns @ 5V,50pF