- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Features：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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- Max Propagation Delay @ V, Max CL：
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- Conditions sélectionnées:
Découvrez les produits 23
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Number of Circuits | Features | Number of Inputs | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Number of Circuits | Features | Number of Inputs | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Texas Instruments |
133
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE NAND 1CH 13-INP 16DIP
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74ALS | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 16-PDIP | 1 | - | 13 | NAND Gate | 0.8V | 2V | 400μA，8mA | 25ns @ 5V，50pF | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE NAND 4CH 2-INP 16DIP
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74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 16-DIP | 4 | Open Collector | 2 | NAND Gate | 0.8V | 2V | -，160mA | 11.5ns @ 5V，50pF | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE NAND 4CH 2-INP 16DIP
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74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 16-DIP | 4 | - | 2 | NAND Gate | 0.8V | 2.4V | 67mA，160mA | 5ns @ 5V，50pF | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 550 MPQ: 1
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IC GATE NAND 1CH 13-INP 16DIP
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74S | 4.75 V ~ 5.25 V | 0°C ~ 70°C | 16-PDIP | 1 | - | 13 | NAND Gate | 0.8V | 2V | 1mA，20mA | 10ns @ 5V，50pF | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE NAND 1CH 13-INP 16DIP
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74ALS | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 16-PDIP | 1 | - | 13 | NAND Gate | 0.8V | 2V | 400μA，8mA | 25ns @ 5V，50pF | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC GATE NOR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 4 | Strobe | 2 | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 1.7ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
|
IC GATE NOR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 4 | Strobe | 2 | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 1.7ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE NOR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 4 | 1 of 4 OR/NOR Output | 2 | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 1.25ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE OR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 4 | 1 of 4 OR/NOR Output | 2 | OR Gate | -1.48V | -1.13V | 50mA，50mA | 1.3ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
|
IC GATE NOR 3CH 4/3/3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 3 | - | 4，3，3 | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 1.5ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE NOR 3CH 4/3/3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 3 | - | 4，3，3 | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 1.5ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
|
IC GATE XOR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 4 | - | 2 | XOR (Exclusive OR) | -1.48V | -1.13V | 50mA，50mA | 1.8ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE XOR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 4 | - | 2 | XOR (Exclusive OR) | -1.48V | -1.13V | 50mA，50mA | 1.8ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
|
IC GATE OR 2CH 3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 2 | 3 Outputs | 3 | OR Gate | -1.48V | -1.13V | 50mA，50mA | 1.55ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 75 MPQ: 1
|
IC GATE OR 2CH 3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 2 | 3 Outputs | 3 | OR Gate | -1.48V | -1.13V | 50mA，50mA | 1.55ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
|
IC GATE NOR 2CH 3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 2 | 3 Outputs | 3 | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 2ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 75 MPQ: 1
|
IC GATE NOR 2CH 3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 2 | 3 Outputs | 3 | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 2ns @ -5.2V，- | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE NAND 1CH 13-INP 16DIP
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74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 16-DIP | 1 | - | 13 | NAND Gate | 0.8V | 2V | 1mA，20mA | 7.5ns @ 5V，50pF | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
|
IC GATE AND 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 4 | 1 of 4 AND/NAND Output | 2 | AND Gate | -1.48V | -1.13V | 50mA，50mA | 1.75ns @ -5.2V，- | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
|
IC GATE AND 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 16-DIP | 4 | 1 of 4 AND/NAND Output | 2 | AND Gate | -1.48V | -1.13V | 50mA，50mA | 1.75ns @ -5.2V，- |
