- Packaging:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Logic Type:
-
- Logic Level - Low:
-
- Logic Level - High:
-
- Current - Output High, Low:
-
- Max Propagation Delay @ V, Max CL:
-
- Conditions sélectionnées:
Découvrez les produits 31
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Number of Inputs | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Number of Inputs | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
Diodes Incorporated |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE AND 1CH 3-INP SOT363
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-TSSOP,SC-88,SOT-363 | SOT-363 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.5ns @ 5V,50pF | ||||
Diodes Incorporated |
10,013
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 3-INP SOT363
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-TSSOP,SC-88,SOT-363 | SOT-363 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.5ns @ 5V,50pF | ||||
Diodes Incorporated |
10,013
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 3-INP SOT363
|
- | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-TSSOP,SC-88,SOT-363 | SOT-363 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.5ns @ 5V,50pF | ||||
Diodes Incorporated |
30,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 4.2ns @ 5V,50pF | ||||
Diodes Incorporated |
7,749
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 4.2ns @ 5V,50pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
- | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 4.2ns @ 5V,50pF | ||||
Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NAND 1CH 3-INP DFN1010-6
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 3 | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 4.3ns @ 5V,50pF | ||||
Diodes Incorporated |
4,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 3-INP DFN1010-6
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 3 | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 4.3ns @ 5V,50pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 3-INP DFN1010-6
|
- | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 3 | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 4.3ns @ 5V,50pF | ||||
Nexperia USA Inc. |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE NAND 1CH 8-INP 14DHVQFN
|
Tape & Reel (TR) | 1.2 V ~ 3.6 V | -40°C ~ 125°C | 14-VFQFN Exposed Pad | 14-DHVQFN (2.5x3) | 8 | NAND Gate | 0.12 V ~ 0.8 V | 1.08 V ~ 2 V | 24mA,24mA | 6.3ns @ 3.3V,50pF | ||||
Nexperia USA Inc. |
2,306
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 8-INP 14DHVQFN
|
Cut Tape (CT) | 1.2 V ~ 3.6 V | -40°C ~ 125°C | 14-VFQFN Exposed Pad | 14-DHVQFN (2.5x3) | 8 | NAND Gate | 0.12 V ~ 0.8 V | 1.08 V ~ 2 V | 24mA,24mA | 6.3ns @ 3.3V,50pF | ||||
Nexperia USA Inc. |
2,306
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 8-INP 14DHVQFN
|
- | 1.2 V ~ 3.6 V | -40°C ~ 125°C | 14-VFQFN Exposed Pad | 14-DHVQFN (2.5x3) | 8 | NAND Gate | 0.12 V ~ 0.8 V | 1.08 V ~ 2 V | 24mA,24mA | 6.3ns @ 3.3V,50pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1410-6
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1410-6 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.5ns @ 5V,50pF | ||||
Diodes Incorporated |
4,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1410-6
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1410-6 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.5ns @ 5V,50pF | ||||
Diodes Incorporated |
4,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1410-6
|
- | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1410-6 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.5ns @ 5V,50pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE NAND 1CH 3-INP SOT363
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-TSSOP,SC-88,SOT-363 | SOT-363 | 3 | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.6ns @ 5V,50pF | ||||
Diodes Incorporated |
234
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 3-INP SOT363
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-TSSOP,SC-88,SOT-363 | SOT-363 | 3 | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.6ns @ 5V,50pF | ||||
Diodes Incorporated |
234
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 3-INP SOT363
|
- | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-TSSOP,SC-88,SOT-363 | SOT-363 | 3 | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.6ns @ 5V,50pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE AND 1CH 3-INP SOT26
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | SOT-23-6 | SOT-26 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.5ns @ 5V,50pF | ||||
Diodes Incorporated |
986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 3-INP SOT26
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | SOT-23-6 | SOT-26 | 3 | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA,32mA | 3.5ns @ 5V,50pF |