Découvrez les produits 27
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Max Propagation Delay @ V, Max CL
TC4S584F,LF
Toshiba Semiconductor and Storage
9,000
3 jours
-
MOQ: 3000  MPQ: 1
IC INVERTER SCHMITT 1CH SMV
Tape & Reel (TR) Schmitt Trigger 1 4μA Inverter 1.1 V ~ 3.3 V 3.35 V ~ 10.6 V 120ns @ 15V,50pF
TC4S584F,LF
Toshiba Semiconductor and Storage
12,000
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER SCHMITT 1CH SMV
Cut Tape (CT) Schmitt Trigger 1 4μA Inverter 1.1 V ~ 3.3 V 3.35 V ~ 10.6 V 120ns @ 15V,50pF
TC4S584F,LF
Toshiba Semiconductor and Storage
12,000
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER SCHMITT 1CH SMV
- Schmitt Trigger 1 4μA Inverter 1.1 V ~ 3.3 V 3.35 V ~ 10.6 V 120ns @ 15V,50pF
TC4S01F(T5L,F,T)
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE NOR 1CH 2-INP SMV
Tape & Reel (TR) - 2 1μA NOR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF
TC4S01F(T5L,F,T)
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE NOR 1CH 2-INP SMV
Cut Tape (CT) - 2 1μA NOR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF
TC4S01F(T5L,F,T)
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE NOR 1CH 2-INP SMV
- - 2 1μA NOR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF
TC4S11FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE NAND 1CH 2-INP SMV
Tape & Reel (TR) - 2 1μA NAND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF
TC4S11FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP SMV
Cut Tape (CT) - 2 1μA NAND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF
TC4S11FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP SMV
- - 2 1μA NAND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF
TC4S30FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE XOR 1CH 2-INP SMV
Tape & Reel (TR) - 2 4μA XOR (Exclusive OR) 1.5 V ~ 4 V 3.5 V ~ 11 V 100ns @ 15V,50pF
TC4S30FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE XOR 1CH 2-INP SMV
Cut Tape (CT) - 2 4μA XOR (Exclusive OR) 1.5 V ~ 4 V 3.5 V ~ 11 V 100ns @ 15V,50pF
TC4S30FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE XOR 1CH 2-INP SMV
- - 2 4μA XOR (Exclusive OR) 1.5 V ~ 4 V 3.5 V ~ 11 V 100ns @ 15V,50pF
TC4SU69FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC INVERTER 1CH 1-INP SMV
Tape & Reel (TR) - 1 1μA Inverter 1 V ~ 3 V 4 V ~ 12 V 50ns @ 15V,50pF
TC4SU69FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP SMV
Cut Tape (CT) - 1 1μA Inverter 1 V ~ 3 V 4 V ~ 12 V 50ns @ 15V,50pF
TC4SU69FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP SMV
- - 1 1μA Inverter 1 V ~ 3 V 4 V ~ 12 V 50ns @ 15V,50pF
TC4S71FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE OR 1CH 2-INP SMV
Tape & Reel (TR) - 2 1μA OR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF
TC4S71FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE OR 1CH 2-INP SMV
Cut Tape (CT) - 2 1μA OR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF
TC4S71FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE OR 1CH 2-INP SMV
- - 2 1μA OR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF
TC4S81FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE AND 1CH 2-INP SMV
Tape & Reel (TR) - 2 1μA AND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF
TC4S81FT5LFT
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP SMV
Cut Tape (CT) - 2 1μA AND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 80ns @ 15V,50pF