- Voltage - Supply:
-
- Operating Temperature:
-
- Logic Level - Low:
-
- Logic Level - High:
-
- Current - Output High, Low:
-
- Max Propagation Delay @ V, Max CL:
-
- Conditions sélectionnées:
Découvrez les produits 13
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
STMicroelectronics |
1,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
4000B | 3 V ~ 20 V | -55°C ~ 125°C | 20μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 6.8mA,6.8mA | 100ns @ 15V,50pF | ||||
STMicroelectronics |
3
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
74HC | 2 V ~ 6 V | -55°C ~ 125°C | 1μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA,5.2mA | 19ns @ 6V,50pF | ||||
ROHM Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
4000B | 3 V ~ 16 V | -40°C ~ 85°C | 4μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 1.2mA,3mA | 40ns @ 15V,50pF | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
4000B | 3 V ~ 15 V | -40°C ~ 85°C | 4μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3mA,3mA | 55ns @ 15V,50pF | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
4000B | 3 V ~ 15 V | -40°C ~ 85°C | 4μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3mA,3mA | 55ns @ 15V,50pF | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
4000B | 3 V ~ 20 V | -55°C ~ 125°C | 20μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 6.8mA,6.8mA | 100ns @ 15V,50pF | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
74HCT | 4.5 V ~ 5.5 V | -40°C ~ 125°C | 2μA | 0.8V | 2V | 4mA,4mA | 32ns @ 4.5V,50pF | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
74HC | 2 V ~ 6 V | -40°C ~ 125°C | 2μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA,5.2mA | 20ns @ 6V,50pF | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
74LV | 1 V ~ 5.5 V | -40°C ~ 125°C | 40μA | 0.3 V ~ 0.8 V | 0.9 V ~ 2 V | 12mA,12mA | 13ns @ 3.3V,50pF | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | - | 0.8V | 2V | 1mA,20mA | 7ns @ 5V,50pF | ||||
ROHM Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
4000B | 3 V ~ 16 V | -40°C ~ 85°C | 4μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 1.2mA,3mA | 40ns @ 15V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
TC74HC | 2 V ~ 6 V | -40°C ~ 85°C | 1μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA,5.2mA | 17ns @ 6V,50pF | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
4000B | 3 V ~ 15 V | -40°C ~ 85°C | - | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3mA,3mA | 55ns @ 15V,50pF |