Découvrez les produits 19
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Operating Temperature Number of Circuits Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
HEF4030BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE XOR 4CH 2-INP 14DIP
-40°C ~ 85°C 4 - 2 4μA XOR (Exclusive OR) 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 55ns @ 15V,50pF
HEF4002BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 2CH 4-INP 14DIP
-40°C ~ 85°C 2 - 4 4μA NOR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 40ns @ 15V,50pF
HEF4071BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE OR 4CH 2-INP 14DIP
-40°C ~ 125°C 4 - 2 4μA OR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3.4mA,3.4mA 35ns @ 15V,50pF
HEF4075BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE OR 3CH 3-INP 14DIP
-40°C ~ 85°C 3 - 3 4μA OR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 40ns @ 15V,50pF
HEF4011BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
-40°C ~ 125°C 4 - 2 1μA NAND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3.4mA,3.4mA 35ns @ 15V,50pF
HEF40106BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC INVERTER SCHMITT 6CH 14DIP
-40°C ~ 125°C 6 Schmitt Trigger 6 4μA Inverter 1.5 V ~ 4 V 3.5 V ~ 11 V 3.4mA,3.4mA 60ns @ 15V,50pF
HEF4070BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE XOR 4CH 2-INP 14DIP
-40°C ~ 85°C 4 - 2 4μA XOR (Exclusive OR) 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 55ns @ 15V,50pF
HEF4068BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 1CH 8-INP 14DIP
-40°C ~ 85°C 1 - 8 4μA NAND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 65ns @ 15V,50pF
HEF4072BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE OR 2CH 4-INP 14DIP
-40°C ~ 85°C 2 - 4 4μA OR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 55ns @ 15V,50pF
HEF4081BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE AND 4CH 2-INP 14DIP
-40°C ~ 125°C 4 - 2 1μA AND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3.4mA,3.4mA 40ns @ 15V,50pF
HEF4093BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND SCHMITT 4CH 14DIP
-40°C ~ 125°C 4 Schmitt Trigger 2 1μA NAND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3.4mA,3.4mA 60ns @ 15V,50pF
HEF4082BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE AND 2CH 4-INP 14DIP
-40°C ~ 125°C 2 - 4 4μA AND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3.4mA,3.4mA 45ns @ 15V,50pF
HEF4077BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE XOR 4CH 2-INP 14DIP
-40°C ~ 85°C 4 - 2 4μA XNOR (Exclusive NOR) 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 55ns @ 15V,50pF
HEF4073BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE AND 3CH 3-INP 14DIP
-40°C ~ 85°C 3 - 3 4μA AND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 40ns @ 15V,50pF
HEF4069UBP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC INVERTER 6CH 6-INP 14DIP
-40°C ~ 125°C 6 - 6 1μA Inverter 1 V ~ 2.5 V 4 V ~ 12.5 V 3.4mA,3.4mA 30ns @ 15V,50pF
HEF4025BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 3CH 3-INP 14DIP
-40°C ~ 85°C 3 - 3 4μA NOR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 40ns @ 15V,50pF
HEF4001BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
-40°C ~ 125°C 4 - 2 1μA NOR Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3.4mA,3.4mA 40ns @ 15V,50pF
HEF4011UBP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
-40°C ~ 85°C 4 - 2 4μA NAND Gate 1 V ~ 2.5 V 4 V ~ 12.5 V 3mA,3mA 40ns @ 15V,50pF
HEF4070BP-Q100U
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE XOR 4CH 2-INP 14DIP
-40°C ~ 85°C 4 - 2 - XOR (Exclusive OR) 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 55ns @ 15V,50pF