Découvrez les produits 22
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Operating Temperature Number of Circuits Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
M74HCT32B1R
STMicroelectronics
417
3 jours
-
MOQ: 1  MPQ: 1
IC GATE OR 4CH 2-INP 14DIP
-55°C ~ 125°C 4 - 2 1μA OR Gate 0.8V 2V 4mA,4mA 21ns @ 4.5V,50pF
74HCT4075N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE OR 3CH 3-INP 14DIP
-40°C ~ 125°C 3 - 3 2μA OR Gate 0.8V 2V 4mA,4mA 24ns @ 4.5V,50pF
74HCT30N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE NAND 1CH 8-INP 14DIP
-40°C ~ 125°C 1 - 8 2μA NAND Gate 0.8V 2V 4mA,4mA 28ns @ 4.5V,50pF
M74HCT14B1R
STMicroelectronics
Enquête
-
-
MOQ: 3000  MPQ: 1
IC INVERTER SCHMITT 6CH 14DIP
-55°C ~ 125°C 6 Schmitt Trigger 6 1μA Inverter 0.5 V ~ 0.6 V 1.9 V ~ 2.1 V 4mA,4mA 30ns @ 4.5V,50pF
M74HCT04B1R
STMicroelectronics
Enquête
-
-
MOQ: 3000  MPQ: 1
IC INVERTER 6CH 6-INP 14DIP
-55°C ~ 125°C 6 - 6 1μA Inverter 0.8V 2V 4mA,4mA 18ns @ 4.5V,50pF
M74HCT00B1R
STMicroelectronics
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
-55°C ~ 125°C 4 - 2 1μA NAND Gate 0.8V 2V 4mA,4mA 19ns @ 4.5V,50pF
74HCT27N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE NOR 3CH 3-INP 14DIP
-40°C ~ 125°C 3 - 3 2μA NOR Gate 0.8V 2V 4mA,4mA 21ns @ 4.5V,50pF
74HCT11N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE AND 3CH 3-INP 14DIP
-40°C ~ 125°C 3 - 3 2μA AND Gate 0.8V 2V 4mA,4mA 24ns @ 4.5V,50pF
74HCT03N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
-40°C ~ 125°C 4 Open Drain 2 2μA NAND Gate 0.8V 2V -,4mA 24ns @ 4.5V,50pF
74HCT20N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE NAND 2CH 4-INP 14DIP
-40°C ~ 125°C 2 - 4 2μA NAND Gate 0.8V 2V 4mA,4mA 28ns @ 4.5V,50pF
74HCT32N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE OR 4CH 2-INP 14DIP
-40°C ~ 125°C 4 - 2 2μA OR Gate 0.8V 2V 4mA,4mA 24ns @ 4.5V,50pF
74HCT14N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC INVERTER SCHMITT 6CH 14DIP
-40°C ~ 125°C 6 Schmitt Trigger 6 2μA Inverter 0.5 V ~ 0.6 V 1.9 V ~ 2.1 V 4mA,4mA 34ns @ 4.5V,50pF
74HCT02N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
-40°C ~ 125°C 4 - 2 2μA NOR Gate 0.8V 2V 4mA,4mA 19ns @ 4.5V,50pF
74HCT00N,652
Nexperia USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
-40°C ~ 125°C 4 - 2 40μA NAND Gate 0.8V 2V 4mA,4mA 12ns @ 4.5V,50pF
74HCT10N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE NAND 3CH 3-INP 14DIP
-40°C ~ 125°C 3 - 3 2μA NAND Gate 0.8V 2V 4mA,4mA 24ns @ 4.5V,50pF
74HCT08N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE AND 4CH 2-INP 14DIP
-40°C ~ 125°C 4 - 2 2μA AND Gate 0.8V 2V 4mA,4mA 24ns @ 4.5V,50pF
74HCT04N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC INVERTER 6CH 6-INP 14DIP
-40°C ~ 125°C 6 - 6 2μA Inverter 0.8V 2V 4mA,4mA 19ns @ 4.5V,50pF
74HCT86N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE XOR 4CH 2-INP 14DIP
-40°C ~ 125°C 4 - 2 2μA XOR (Exclusive OR) 0.8V 2V 4mA,4mA 32ns @ 4.5V,50pF
74HCT4002N,112
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE NOR 2CH 4-INP 14DIP
-40°C ~ 125°C 2 - 4 2μA NOR Gate 0.8V 2V 4mA,4mA 22ns @ 4.5V,50pF
74HCT132N,652
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE NAND SCHMITT 4CH 14DIP
-40°C ~ 125°C 4 Schmitt Trigger 2 2μA NAND Gate 0.5 V ~ 0.6 V 1.9 V ~ 2.1 V 4mA,4mA 33ns @ 4.5V,50pF