- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Features：
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- Logic Type：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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- Max Propagation Delay @ V, Max CL：
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- Conditions sélectionnées:
Découvrez les produits 24
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Features | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Features | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 10000 MPQ: 1
|
IC GATE NAND SCHMITT 2CH 8X2SON
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XDFN Exposed Pad | Schmitt Trigger | 500nA | NAND Gate | - | - | 4mA，4mA | 7.8ns @ 3.3V，30pF | ||
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|
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Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND SCHMITT 2CH 8X2SON
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XDFN Exposed Pad | Schmitt Trigger | 500nA | NAND Gate | - | - | 4mA，4mA | 7.8ns @ 3.3V，30pF | ||
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|
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Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND SCHMITT 2CH 8X2SON
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XDFN Exposed Pad | Schmitt Trigger | 500nA | NAND Gate | - | - | 4mA，4mA | 7.8ns @ 3.3V，30pF | ||
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|
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Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 10000 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA，32mA | 4.2ns @ 5V，50pF | ||
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|
|
Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
- | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA，32mA | 4.2ns @ 5V，50pF | ||
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|
|
Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 10000 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
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|
|
Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | 32mA，32mA | 4.2ns @ 5V，50pF | ||
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|
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Nexperia USA Inc. |
Enquête
|
- |
-
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MOQ: 10000 MPQ: 1
|
74LVC2G08GX/SOT1233/X2SON8
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C (TA) | 8-XFDFN Exposed Pad | - | 4μA | AND Gate | 0.7 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA，32mA | 4.8ns @ 5V，50pF | ||
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|
|
Nexperia USA Inc. |
9,965
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
74LVC2G08GX/SOT1233/X2SON8
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C (TA) | 8-XFDFN Exposed Pad | - | 4μA | AND Gate | 0.7 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA，32mA | 4.8ns @ 5V，50pF | ||
|
|
|
Nexperia USA Inc. |
9,965
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
74LVC2G08GX/SOT1233/X2SON8
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C (TA) | 8-XFDFN Exposed Pad | - | 4μA | AND Gate | 0.7 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA，32mA | 4.8ns @ 5V，50pF | ||
|
|
|
Nexperia USA Inc. |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Nexperia USA Inc. |
9,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Nexperia USA Inc. |
9,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Nexperia USA Inc. |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC GATE XOR 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | XOR (Exclusive OR) | 0.07 V ~ 0.55 V | 1.2 V ~ 4.11 V | 32mA，32mA | 4.5ns @ 5V，50pF | ||
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|
|
Nexperia USA Inc. |
9,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE XOR 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | XOR (Exclusive OR) | 0.07 V ~ 0.55 V | 1.2 V ~ 4.11 V | 32mA，32mA | 4.5ns @ 5V，50pF | ||
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|
|
Nexperia USA Inc. |
9,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE XOR 2CH 2-INP 8X2SON
|
- | 74LVC | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | XOR (Exclusive OR) | 0.07 V ~ 0.55 V | 1.2 V ~ 4.11 V | 32mA，32mA | 4.5ns @ 5V，50pF | ||
|
|
|
Nexperia USA Inc. |
Enquête
|
- |
-
|
MOQ: 10000 MPQ: 1
|
IC GATE OR 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | OR Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA，32mA | 4ns @ 5V，50pF | ||
|
|
|
Nexperia USA Inc. |
9,973
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE OR 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | - | 4μA | OR Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | 32mA，32mA | 4ns @ 5V，50pF |
