- Packaging：
-
- Series：
-
- Voltage - Supply：
-
- Features：
-
- Logic Level - Low：
-
- Logic Level - High：
-
- Current - Output High, Low：
-
- Max Propagation Delay @ V, Max CL：
-
- Conditions sélectionnées:
Découvrez les produits 24
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Features | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Features | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Tape & Reel (TR) | TC4S | 3 V ~ 18 V | - | 1μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3.4mA，3.4mA | 80ns @ 15V，50pF | ||
|
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Cut Tape (CT) | TC4S | 3 V ~ 18 V | - | 1μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3.4mA，3.4mA | 80ns @ 15V，50pF | ||
|
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
- | TC4S | 3 V ~ 18 V | - | 1μA | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3.4mA，3.4mA | 80ns @ 15V，50pF | ||
|
|
Toshiba Semiconductor and Storage |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Tape & Reel (TR) | TC7SH | 2 V ~ 5.5 V | - | 2μA | 0.5V | 1.5V | 8mA，8mA | 7.5ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
6,830
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Cut Tape (CT) | TC7SH | 2 V ~ 5.5 V | - | 2μA | 0.5V | 1.5V | 8mA，8mA | 7.5ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
6,830
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
- | TC7SH | 2 V ~ 5.5 V | - | 2μA | 0.5V | 1.5V | 8mA，8mA | 7.5ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Tape & Reel (TR) | TC7SZ | 1.8 V ~ 5.5 V | - | 2μA | - | - | 32mA，32mA | 4.3ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
4,458
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Cut Tape (CT) | TC7SZ | 1.8 V ~ 5.5 V | - | 2μA | - | - | 32mA，32mA | 4.3ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
4,458
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
- | TC7SZ | 1.8 V ~ 5.5 V | - | 2μA | - | - | 32mA，32mA | 4.3ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Tape & Reel (TR) | TC7SET | 4.5 V ~ 5.5 V | - | 2μA | 0.8V | 2V | 8mA，8mA | 9ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
2,383
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Cut Tape (CT) | TC7SET | 4.5 V ~ 5.5 V | - | 2μA | 0.8V | 2V | 8mA，8mA | 9ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
- | TC7SET | 4.5 V ~ 5.5 V | - | 2μA | 0.8V | 2V | 8mA，8mA | 9ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Tape & Reel (TR) | TC7SZ | 1.8 V ~ 5.5 V | - | 2μA | - | - | 32mA，32mA | 4.3ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
428
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Cut Tape (CT) | TC7SZ | 1.8 V ~ 5.5 V | - | 2μA | - | - | 32mA，32mA | 4.3ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
- | TC7SZ | 1.8 V ~ 5.5 V | - | 2μA | - | - | 32mA，32mA | 4.3ns @ 5V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Tape & Reel (TR) | TC7S | 2 V ~ 6 V | - | 1μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 2.6mA，2.6mA | 17ns @ 6V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Cut Tape (CT) | TC7S | 2 V ~ 6 V | - | 1μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 2.6mA，2.6mA | 17ns @ 6V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
- | TC7S | 2 V ~ 6 V | - | 1μA | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 2.6mA，2.6mA | 17ns @ 6V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Tape & Reel (TR) | TC4S | 3 V ~ 18 V | - | 1μA | 1 V ~ 3 V | 4 V ~ 12 V | 3.4mA，3.4mA | 50ns @ 15V，50pF | |||
|
|
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP SMV
|
Cut Tape (CT) | TC4S | 3 V ~ 18 V | - | 1μA | 1 V ~ 3 V | 4 V ~ 12 V | 3.4mA，3.4mA | 50ns @ 15V，50pF |
