Découvrez les produits 118
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
TC7SH14FU,LJ(CT
Toshiba Semiconductor and Storage
10,479
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER SCHMITT 1CH USV
- TC7SH 2 V ~ 5.5 V Schmitt Trigger 1 2μA Inverter 0.9 V ~ 1.65 V 2.2 V ~ 3.85 V 8mA,8mA 10.6ns @ 5V,50pF
TC7SET08FU,LJ(CT
Toshiba Semiconductor and Storage
6,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE AND 1CH 2-INP USV
Tape & Reel (TR) TC7SET 4.5 V ~ 5.5 V - 2 2μA AND Gate 0.8V 2V 8mA,8mA 9ns @ 5V,50pF
TC7SET08FU,LJ(CT
Toshiba Semiconductor and Storage
7,235
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP USV
Cut Tape (CT) TC7SET 4.5 V ~ 5.5 V - 2 2μA AND Gate 0.8V 2V 8mA,8mA 9ns @ 5V,50pF
TC7SET08FU,LJ(CT
Toshiba Semiconductor and Storage
7,235
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP USV
- TC7SET 4.5 V ~ 5.5 V - 2 2μA AND Gate 0.8V 2V 8mA,8mA 9ns @ 5V,50pF
TC7SET04FU,LJ(CT
Toshiba Semiconductor and Storage
63,000
3 jours
-
MOQ: 3000  MPQ: 1
IC INVERTER 1CH 1-INP USV
Tape & Reel (TR) TC7SET 4.5 V ~ 5.5 V - 1 2μA Inverter 0.8V 2V 8mA,8mA 10.5ns @ 5V,50pF
TC7SET04FU,LJ(CT
Toshiba Semiconductor and Storage
63,971
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP USV
Cut Tape (CT) TC7SET 4.5 V ~ 5.5 V - 1 2μA Inverter 0.8V 2V 8mA,8mA 10.5ns @ 5V,50pF
TC7SET04FU,LJ(CT
Toshiba Semiconductor and Storage
63,971
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP USV
- TC7SET 4.5 V ~ 5.5 V - 1 2μA Inverter 0.8V 2V 8mA,8mA 10.5ns @ 5V,50pF
TC7SZ04FU,LJ(CT
Toshiba Semiconductor and Storage
12,000
3 jours
-
MOQ: 3000  MPQ: 1
IC INVERTER 1CH 1-INP USV
Tape & Reel (TR) TC7SZ 1.8 V ~ 5.5 V - 1 2μA Inverter - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ04FU,LJ(CT
Toshiba Semiconductor and Storage
14,524
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP USV
Cut Tape (CT) TC7SZ 1.8 V ~ 5.5 V - 1 2μA Inverter - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ04FU,LJ(CT
Toshiba Semiconductor and Storage
14,524
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP USV
- TC7SZ 1.8 V ~ 5.5 V - 1 2μA Inverter - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ32FU,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE OR 1CH 2-INP USV
Tape & Reel (TR) TC7SZ 1.8 V ~ 5.5 V - 2 2μA OR Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ32FU,LJ(CT
Toshiba Semiconductor and Storage
6,138
3 jours
-
MOQ: 1  MPQ: 1
IC GATE OR 1CH 2-INP USV
Cut Tape (CT) TC7SZ 1.8 V ~ 5.5 V - 2 2μA OR Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SZ32FU,LJ(CT
Toshiba Semiconductor and Storage
6,138
3 jours
-
MOQ: 1  MPQ: 1
IC GATE OR 1CH 2-INP USV
- TC7SZ 1.8 V ~ 5.5 V - 2 2μA OR Gate - - 32mA,32mA 4.5ns @ 5V,50pF
TC7SH00FU,LJ(CT
Toshiba Semiconductor and Storage
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE NAND 1CH 2-INP USV
Tape & Reel (TR) TC7SH 2 V ~ 5.5 V - 2 2μA NAND Gate 0.5V 1.5V 8mA,8mA 7.5ns @ 5V,50pF
TC7SH00FU,LJ(CT
Toshiba Semiconductor and Storage
5,323
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP USV
Cut Tape (CT) TC7SH 2 V ~ 5.5 V - 2 2μA NAND Gate 0.5V 1.5V 8mA,8mA 7.5ns @ 5V,50pF
TC7SH00FU,LJ(CT
Toshiba Semiconductor and Storage
5,323
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP USV
- TC7SH 2 V ~ 5.5 V - 2 2μA NAND Gate 0.5V 1.5V 8mA,8mA 7.5ns @ 5V,50pF
TC7SZ00FU,LJ(CT
Toshiba Semiconductor and Storage
9,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE NAND 1CH 2-INP USV
Tape & Reel (TR) TC7SZ 1.8 V ~ 5.5 V - 2 2μA NAND Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00FU,LJ(CT
Toshiba Semiconductor and Storage
11,621
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP USV
Cut Tape (CT) TC7SZ 1.8 V ~ 5.5 V - 2 2μA NAND Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00FU,LJ(CT
Toshiba Semiconductor and Storage
11,621
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP USV
- TC7SZ 1.8 V ~ 5.5 V - 2 2μA NAND Gate - - 32mA,32mA 4.3ns @ 5V,50pF
TC7S08FU,LF
Toshiba Semiconductor and Storage
39,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE AND 1CH 2-INP USV
Tape & Reel (TR) TC7S 2 V ~ 6 V - 2 1μA AND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 2.6mA,2.6mA 17ns @ 6V,50pF