- Series：
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- Voltage - Supply：
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- Features：
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- Logic Type：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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- Max Propagation Delay @ V, Max CL：
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- Conditions sélectionnées:
Découvrez les produits 11
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Number of Circuits | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Number of Circuits | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Toshiba Semiconductor and Storage |
3,000
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3 jours |
-
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MOQ: 3000 MPQ: 1
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IC INVERTER SCHMITT 3CH SM8
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TC7WH | 2 V ~ 5.5 V | 3 | Schmitt Trigger | 3 | 2μA | Inverter | 0.9 V ~ 1.65 V | 2.2 V ~ 3.85 V | 8mA，8mA | 10.6ns @ 5V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC INVERTER 3CH 3-INP SM8
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TC7WH | 2 V ~ 5.5 V | 3 | - | 3 | 2μA | Inverter | 0.5V | 1.5V | 8mA，8mA | 7.5ns @ 5V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC GATE NAND 2CH 2-INP SM8
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TC7W | 2 V ~ 6 V | 2 | - | 2 | 1μA | NAND Gate | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 13ns @ 6V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE NOR 2CH 2-INP SM8
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TC7W | 2 V ~ 6 V | 2 | - | 2 | 1μA | NOR Gate | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 13ns @ 6V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE OR 2CH 2-INP SM8
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TC7W | 2 V ~ 6 V | 2 | - | 2 | 1μA | OR Gate | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 13ns @ 6V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE AND 2CH 2-INP SM8
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TC7W | 2 V ~ 6 V | 2 | - | 2 | 1μA | AND Gate | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 13ns @ 6V，50pF | |||
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Toshiba Semiconductor and Storage |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE NAND 2CH 2-INP SM8
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TC7WH | 2 V ~ 5.5 V | 2 | - | 2 | 2μA | NAND Gate | 0.5V | 1.5V | 8mA，8mA | 7.5ns @ 5V，50pF | |||
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Toshiba Semiconductor and Storage |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE OR 2CH 2-INP SM8
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TC7WH | 2 V ~ 5.5 V | 2 | - | 2 | 2μA | OR Gate | - | - | 8mA，8mA | 7.5ns @ 5V，50pF | |||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE AND 2CH 2-INP SM8
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TC7WH | 2 V ~ 5.5 V | 2 | - | 2 | 2μA | AND Gate | - | - | 8mA，8mA | 7.9ns @ 5V，50pF | |||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC INVERTER 3CH 3-INP SM8
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TC7WHU | 2 V ~ 5.5 V | 3 | - | 3 | 2μA | Inverter | 0.3V | 1.7V | 8mA，8mA | 7ns @ 5V，50pF | |||
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Toshiba Semiconductor and Storage |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC INVERTER 3CH 3-INP SM8
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TC7W | 2 V ~ 6 V | 3 | - | 3 | 1μA | Inverter | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 13ns @ 6V，50pF |
