- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Features：
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- Current - Quiescent (Max)：
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- Logic Type：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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- Max Propagation Delay @ V, Max CL：
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- Conditions sélectionnées:
Découvrez les produits 79
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Number of Circuits | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Number of Circuits | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN1010-6
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 1 | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
6,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN1010-6
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 1 | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
6,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN1010-6
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 1 | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
30,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 1 | - | 3 | 40μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
7,749
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 1 | - | 3 | 40μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.2ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 1 | - | 3 | 40μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.2ns @ 5V，50pF | ||
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|
|
Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NAND 1CH 3-INP DFN1010-6
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 1 | - | 3 | 40μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.3ns @ 5V，50pF | ||
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|
|
Diodes Incorporated |
4,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 3-INP DFN1010-6
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 1 | - | 3 | 40μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.3ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 3-INP DFN1010-6
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 1 | - | 3 | 40μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 4.3ns @ 5V，50pF | ||
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|
|
Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE AND 1CH 2-INP DFN1010-6
|
Tape & Reel (TR) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 1 | - | 2 | 200μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 5.5ns @ 5V，50pF | ||
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|
|
Diodes Incorporated |
41
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 2-INP DFN1010-6
|
Cut Tape (CT) | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 1 | - | 2 | 200μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 5.5ns @ 5V，50pF | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 2-INP DFN1010-6
|
- | 74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 1 | - | 2 | 200μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | 5.5ns @ 5V，50pF | ||
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|
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC INVERTER 1CH 1-INP DFN1010-6
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C (TA) | 1 | Open Drain | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 10.5ns @ 3.3V，30pF | ||
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|
|
Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC INVERTER 1CH 1-INP DFN1010-6
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 1 | Open Drain | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 10.5ns @ 3.3V，30pF | ||
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|
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Diodes Incorporated |
4,560
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTER 1CH 1-INP DFN1010-6
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 1 | Open Drain | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 10.5ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTER 1CH 1-INP DFN1010-6
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 1 | Open Drain | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 10.5ns @ 3.3V，30pF | ||
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|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN1010-6
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C (TA) | 1 | - | 2 | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
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|
|
Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN1010-6
|
Tape & Reel (TR) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 1 | - | 2 | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
4,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN1010-6
|
Cut Tape (CT) | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 1 | - | 2 | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN1010-6
|
- | 74AUP | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 1 | - | 2 | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF |
