Découvrez les produits 35
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Supplier Device Package Features Number of Inputs Current - Quiescent (Max) Logic Type Current - Output High, Low Max Propagation Delay @ V, Max CL
SN74LVC1G04DPWR
Texas Instruments
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC INVERTER 1CH 1-INP 4XDFN
Tape & Reel (TR) -40°C ~ 125°C 4-XDFN (0.8x0.8) - 1 10μA Inverter 32mA,32mA 3.7ns @ 5V,50pF
SN74LVC1G04DPWR
Texas Instruments
7,721
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP 4XDFN
Cut Tape (CT) -40°C ~ 125°C 4-XDFN (0.8x0.8) - 1 10μA Inverter 32mA,32mA 3.7ns @ 5V,50pF
SN74LVC1G04DPWR
Texas Instruments
7,721
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP 4XDFN
- -40°C ~ 125°C 4-XDFN (0.8x0.8) - 1 10μA Inverter 32mA,32mA 3.7ns @ 5V,50pF
74LVC1G04FS3-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC INVERTER 1CH 1-INP DFN0808-4
Tape & Reel (TR) -40°C ~ 125°C X2-DFN0808-4 - 1 200μA Inverter 32mA,32mA 5ns @ 5V,50pF
74LVC1G04FS3-7
Diodes Incorporated
4,332
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP DFN0808-4
Cut Tape (CT) -40°C ~ 125°C X2-DFN0808-4 - 1 200μA Inverter 32mA,32mA 5ns @ 5V,50pF
74LVC1G04FS3-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP DFN0808-4
- -40°C ~ 125°C X2-DFN0808-4 - 1 200μA Inverter 32mA,32mA 5ns @ 5V,50pF
74LVC1G00FS3-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE NAND 1CH 2-INP DFN0808-4
Tape & Reel (TR) -40°C ~ 125°C X2-DFN0808-4 - 2 200μA NAND Gate 32mA,32mA 5.5ns @ 5V,50pF
74LVC1G00FS3-7
Diodes Incorporated
3,900
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP DFN0808-4
Cut Tape (CT) -40°C ~ 125°C X2-DFN0808-4 - 2 200μA NAND Gate 32mA,32mA 5.5ns @ 5V,50pF
74LVC1G00FS3-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP DFN0808-4
- -40°C ~ 125°C X2-DFN0808-4 - 2 200μA NAND Gate 32mA,32mA 5.5ns @ 5V,50pF
74LVC1G32FS3-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE OR 1CH 2-INP DFN0808-4
Tape & Reel (TR) -40°C ~ 125°C X2-DFN0808-4 - 2 200μA OR Gate 32mA,32mA 5.5ns @ 5V,50pF
74LVC1G32FS3-7
Diodes Incorporated
2,834
3 jours
-
MOQ: 1  MPQ: 1
IC GATE OR 1CH 2-INP DFN0808-4
Cut Tape (CT) -40°C ~ 125°C X2-DFN0808-4 - 2 200μA OR Gate 32mA,32mA 5.5ns @ 5V,50pF
74LVC1G32FS3-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE OR 1CH 2-INP DFN0808-4
- -40°C ~ 125°C X2-DFN0808-4 - 2 200μA OR Gate 32mA,32mA 5.5ns @ 5V,50pF
74LVC1G08FS3-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE AND 1CH 2-INP 4X2DFN
Tape & Reel (TR) -40°C ~ 125°C 4-X2DFN (0.8x0.8) - 2 200μA AND Gate 32mA,32mA 5.5ns @ 5V,50pF
74LVC1G08FS3-7
Diodes Incorporated
2,005
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP 4X2DFN
Cut Tape (CT) -40°C ~ 125°C 4-X2DFN (0.8x0.8) - 2 200μA AND Gate 32mA,32mA 5.5ns @ 5V,50pF
74LVC1G08FS3-7
Diodes Incorporated
2,005
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP 4X2DFN
- -40°C ~ 125°C 4-X2DFN (0.8x0.8) - 2 200μA AND Gate 32mA,32mA 5.5ns @ 5V,50pF
SN74LVC1G00DPWR
Texas Instruments
3,432
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP 4X2SON
Cut Tape (CT) -40°C ~ 125°C 4-X2SON (0.8x0.8) - 2 10μA NAND Gate 32mA,32mA 4.3ns @ 5V,50pF
SN74LVC1G00DPWR
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP 4X2SON
- -40°C ~ 125°C 4-X2SON (0.8x0.8) - 2 10μA NAND Gate 32mA,32mA 4.3ns @ 5V,50pF
SN74LVC1G02DPWR
Texas Instruments
2,119
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NOR 1CH 2-INP 4XDFN
Cut Tape (CT) -40°C ~ 125°C 4-XDFN (0.8x0.8) - 2 10μA NOR Gate 32mA,32mA 4.5ns @ 5V,50pF
SN74LVC1G02DPWR
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE NOR 1CH 2-INP 4XDFN
- -40°C ~ 125°C 4-XDFN (0.8x0.8) - 2 10μA NOR Gate 32mA,32mA 4.5ns @ 5V,50pF
SN74LVC1G32DPWR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE OR 1CH 2-INP 4X2SON
Tape & Reel (TR) -40°C ~ 125°C 4-X2SON (0.8x0.8) - 2 10μA OR Gate 32mA,32mA 4ns @ 5V,50pF