- Packaging：
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- Operating Temperature：
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- Supplier Device Package：
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- Features：
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- Logic Type：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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- Conditions sélectionnées:
Découvrez les produits 53
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Supplier Device Package | Features | Number of Inputs | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Supplier Device Package | Features | Number of Inputs | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC INVERTER 1CH 1-INP 4X2DFN
|
Tape & Reel (TR) | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | Open Drain | 1 | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 10.5ns @ 3.3V，30pF | ||
|
|
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Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTER 1CH 1-INP 4X2DFN
|
Cut Tape (CT) | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | Open Drain | 1 | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 10.5ns @ 3.3V，30pF | ||
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|
|
Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTER 1CH 1-INP 4X2DFN
|
- | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | Open Drain | 1 | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | -，4mA | 10.5ns @ 3.3V，30pF | ||
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|
|
Texas Instruments |
10,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NOR 1CH 2-INP 4X2SON
|
Cut Tape (CT) | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 2 | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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|
|
Texas Instruments |
10,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NOR 1CH 2-INP 4X2SON
|
- | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 2 | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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|
|
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC INVERTER 1CH 1-INP 4X2SON
|
Tape & Reel (TR) | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 1 | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 5.4ns @ 3.3V，30pF | ||
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|
|
Texas Instruments |
9,802
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTER 1CH 1-INP 4X2SON
|
Cut Tape (CT) | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 1 | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 5.4ns @ 3.3V，30pF | ||
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|
|
Texas Instruments |
9,802
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTER 1CH 1-INP 4X2SON
|
- | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 1 | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 5.4ns @ 3.3V，30pF | ||
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|
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Texas Instruments |
8,900
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 2-INP 4X2SON
|
Cut Tape (CT) | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 2 | AND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.2ns @ 3.3V，30pF | ||
|
|
|
Texas Instruments |
8,900
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 2-INP 4X2SON
|
- | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 2 | AND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.2ns @ 3.3V，30pF | ||
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|
|
Texas Instruments |
8,999
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE OR 1CH 2-INP 4X2SON
|
Cut Tape (CT) | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 2 | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
|
|
|
Texas Instruments |
8,999
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE OR 1CH 2-INP 4X2SON
|
- | -40°C ~ 85°C | 4-X2SON (0.8x0.8) | - | 2 | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
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|
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Diodes Incorporated |
4,989
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
Cut Tape (CT) | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
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|
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
- | -40°C ~ 125°C | X2-DFN0808-4 | - | 2 | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE OR 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | X2-DFN0808-4 | - | 2 | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE OR 1CH 2-INP 4X2DFN
|
Tape & Reel (TR) | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 2 | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
4,835
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE OR 1CH 2-INP 4X2DFN
|
Cut Tape (CT) | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 2 | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE OR 1CH 2-INP 4X2DFN
|
- | -40°C ~ 125°C | 4-X2DFN (0.8x0.8) | - | 2 | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | X2-DFN0808-4 | - | 2 | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 7.1ns @ 3.3V，30pF |
