Découvrez les produits 70
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Supplier Device Package Features Number of Inputs Current - Quiescent (Max) Logic Type Current - Output High, Low Max Propagation Delay @ V, Max CL
SN74LVC1G08DRLR
Texas Instruments
32,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE AND 1CH 2-INP 5SOT
Tape & Reel (TR) 74LVC -40°C ~ 125°C 5-SOT - 2 10μA AND Gate 32mA,32mA 4ns @ 5V,50pF
SN74LVC1G08DRLR
Texas Instruments
38,543
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP SOT5
Cut Tape (CT) 74LVC -40°C ~ 125°C SOT-5 - 2 10μA AND Gate 32mA,32mA 4ns @ 5V,50pF
SN74LVC1G08DRLR
Texas Instruments
38,543
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP SOT5
- 74LVC -40°C ~ 125°C SOT-5 - 2 10μA AND Gate 32mA,32mA 4ns @ 5V,50pF
SN74LVC1GU04DRLR
Texas Instruments
Enquête
-
-
MOQ: 4000  MPQ: 1
IC INVERTER 1CH 1-INP SOT5
Tape & Reel (TR) 74LVC -40°C ~ 125°C SOT-5 - 1 10μA Inverter 32mA,32mA 3.5ns @ 5V,50pF
SN74LVC1GU04DRLR
Texas Instruments
2,051
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP SOT5
Cut Tape (CT) 74LVC -40°C ~ 125°C SOT-5 - 1 10μA Inverter 32mA,32mA 3.5ns @ 5V,50pF
SN74LVC1GU04DRLR
Texas Instruments
2,051
3 jours
-
MOQ: 1  MPQ: 1
IC INVERTER 1CH 1-INP SOT5
- 74LVC -40°C ~ 125°C SOT-5 - 1 10μA Inverter 32mA,32mA 3.5ns @ 5V,50pF
SN74LVC1G08DRLRG4
Texas Instruments
Enquête
-
-
MOQ: 4000  MPQ: 1
IC GATE AND 1CH 2-INP SOT5
Tape & Reel (TR) 74LVC -40°C ~ 125°C SOT-5 - 2 10μA AND Gate 32mA,32mA 4ns @ 5V,50pF
74LVC1GU04DRLRG4
Texas Instruments
Enquête
-
-
MOQ: 4000  MPQ: 1
IC INVERTER 1CH 1-INP SOT5
Tape & Reel (TR) 74LVC -40°C ~ 125°C SOT-5 - 1 10μA Inverter 32mA,32mA 3ns @ 5V,50pF
TC7SZ08FE,LJ(CT
Toshiba Semiconductor and Storage
8,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE AND 1CH 2-INP ESV
Tape & Reel (TR) TC7SZ -40°C ~ 85°C ESV - 2 2μA AND Gate 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ08FE,LJ(CT
Toshiba Semiconductor and Storage
8,286
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP ESV
Cut Tape (CT) TC7SZ -40°C ~ 85°C ESV - 2 2μA AND Gate 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ08FE,LJ(CT
Toshiba Semiconductor and Storage
8,286
3 jours
-
MOQ: 1  MPQ: 1
IC GATE AND 1CH 2-INP ESV
- TC7SZ -40°C ~ 85°C ESV - 2 2μA AND Gate 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ02FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE NOR 1CH 2-INP ESV
Tape & Reel (TR) TC7SZ -40°C ~ 85°C ESV - 2 2μA NOR Gate 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02FE,LJ(CT
Toshiba Semiconductor and Storage
4,416
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NOR 1CH 2-INP ESV
Cut Tape (CT) TC7SZ -40°C ~ 85°C ESV - 2 2μA NOR Gate 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ02FE,LJ(CT
Toshiba Semiconductor and Storage
4,416
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NOR 1CH 2-INP ESV
- TC7SZ -40°C ~ 85°C ESV - 2 2μA NOR Gate 32mA,32mA 4.3ns @ 5V,50pF
TC7SZ00FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE NAND 1CH 2-INP ESV
Tape & Reel (TR) TC7SZ -40°C ~ 85°C ESV - 2 2μA NAND Gate 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ00FE,LJ(CT
Toshiba Semiconductor and Storage
7,321
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP ESV
Cut Tape (CT) TC7SZ -40°C ~ 85°C ESV - 2 2μA NAND Gate 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ00FE,LJ(CT
Toshiba Semiconductor and Storage
7,321
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 1CH 2-INP ESV
- TC7SZ -40°C ~ 85°C ESV - 2 2μA NAND Gate 32mA,32mA 3.6ns @ 5V,50pF
TC7SZ86FE,LJ(CT
Toshiba Semiconductor and Storage
4,000
3 jours
-
MOQ: 4000  MPQ: 1
IC GATE XOR 1CH 2-INP ESV
Tape & Reel (TR) TC7SZ -40°C ~ 85°C ESV - 2 2μA XOR (Exclusive OR) 32mA,32mA 5.4ns @ 5V,50pF
TC7SZ86FE,LJ(CT
Toshiba Semiconductor and Storage
5,252
3 jours
-
MOQ: 1  MPQ: 1
IC GATE XOR 1CH 2-INP ESV
Cut Tape (CT) TC7SZ -40°C ~ 85°C ESV - 2 2μA XOR (Exclusive OR) 32mA,32mA 5.4ns @ 5V,50pF
TC7SZ86FE,LJ(CT
Toshiba Semiconductor and Storage
5,252
3 jours
-
MOQ: 1  MPQ: 1
IC GATE XOR 1CH 2-INP ESV
- TC7SZ -40°C ~ 85°C ESV - 2 2μA XOR (Exclusive OR) 32mA,32mA 5.4ns @ 5V,50pF