Supplier Device Package:
Number of Circuits:
Max Propagation Delay @ V, Max CL:
Découvrez les produits 807
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Supplier Device Package Number of Circuits Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
74HCT00N,652
Nexperia USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 14-DIP 4 - 2 40μA NAND Gate 0.8V 2V 4mA,4mA 12ns @ 4.5V,50pF
74HC32N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE OR 4CH 2-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 4 - 2 2μA OR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 15ns @ 6V,50pF
74HC02N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 4 - 2 2μA NOR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 15ns @ 6V,50pF
N74F132N,602
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND SCHMITT 4CH 14DIP
74F 4.5 V ~ 5.5 V 0°C ~ 70°C 14-DIP 4 Schmitt Trigger 2 - NAND Gate 0.8V 2V 1mA,20mA 8.5ns @ 5V,50pF
74HCT10N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 3CH 3-INP 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 14-DIP 3 - 3 2μA NAND Gate 0.8V 2V 4mA,4mA 24ns @ 4.5V,50pF
74HCT08N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE AND 4CH 2-INP 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 14-DIP 4 - 2 2μA AND Gate 0.8V 2V 4mA,4mA 24ns @ 4.5V,50pF
74HCT04N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC INVERTER 6CH 6-INP 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 14-DIP 6 - 6 2μA Inverter 0.8V 2V 4mA,4mA 19ns @ 4.5V,50pF
74HC11N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE AND 3CH 3-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 3 - 3 2μA AND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 17ns @ 6V,50pF
74HC30N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 1CH 8-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 1 - 8 2μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 22ns @ 6V,50pF
N74F27N,602
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 3CH 3-INP 14DIP
74F 4.5 V ~ 5.5 V 0°C ~ 70°C 14-DIP 3 - 3 - NOR Gate 0.8V 2V 1mA,20mA 5ns @ 5V,50pF
N74F04N,602
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC INVERTER 6CH 6-INP 14DIP
74F 4.5 V ~ 5.5 V 0°C ~ 70°C 14-DIP 6 - 6 - Inverter 0.8V 2V 1mA,20mA 5ns @ 5V,50pF
N74F02N,602
NXP USA Inc.
Enquête
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-
MOQ: 1000  MPQ: 1
IC GATE NOR 4CH 2-INP 14DIP
74F 4.5 V ~ 5.5 V 0°C ~ 70°C 14-DIP 4 - 2 - NOR Gate 0.8V 2V 1mA,20mA 5.5ns @ 5V,50pF
74HCU04N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC INVERTER 6CH 6-INP 14DIP
74HCU 2 V ~ 6 V -40°C ~ 125°C 14-DIP 6 - 6 2μA Inverter 0.3 V ~ 1.2 V 1.7 V ~ 4.8 V 5.2mA,5.2mA 12ns @ 6V,50pF
74HCT86N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE XOR 4CH 2-INP 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 14-DIP 4 - 2 2μA XOR (Exclusive OR) 0.8V 2V 4mA,4mA 32ns @ 4.5V,50pF
74HCT4002N,112
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 2CH 4-INP 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 14-DIP 2 - 4 2μA NOR Gate 0.8V 2V 4mA,4mA 22ns @ 4.5V,50pF
74HCT132N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND SCHMITT 4CH 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 14-DIP 4 Schmitt Trigger 2 2μA NAND Gate 0.5 V ~ 0.6 V 1.9 V ~ 2.1 V 4mA,4mA 33ns @ 4.5V,50pF
74HC86N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE XOR 4CH 2-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 4 - 2 2μA XOR (Exclusive OR) 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 20ns @ 6V,50pF
74HC27N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NOR 3CH 3-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 3 - 3 2μA NOR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 15ns @ 6V,50pF
74HC21N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE AND 2CH 4-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 2 - 4 2μA AND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 19ns @ 6V,50pF
N74F00N,602
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
74F 4.5 V ~ 5.5 V 0°C ~ 70°C 14-DIP 4 - 2 - NAND Gate 0.8V 2V 1mA,20mA 5ns @ 5V,50pF